Development of a high-precision <i>XYZ</i> translator and estimation of beam profile of the vacuum ultraviolet and soft X-ray undulator beamline BL-13B at the Photon Factory

Aiura, Y.; Ozawa, K.; Mase, Kenji; Minohara, Makoto; Suzuki, Satoshi

doi:10.1107/s1600577520006712

Cited by 5 publications

(9 citation statements)

References 39 publications

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“…As already pointed out in our previous study (Aiura et al, 2020), the actual beam size depends on the photon energy. Fig.…”

Section: Beam Profile Assessmentsupporting

confidence: 66%

“…For comparison, the beam profiles before upgrading of the M3 mirror are shown in Figs. 4(c) and 4(d) (Aiura et al, 2020). For the beam at h = 100 eV with the 300 lines mm À1 VLSG, the beam size was 78 mm (H) Â 15 mm (V), which was about one-third of the original size [226 mm (H) Â 43 mm (V)].…”

Section: Beam Profile Assessmentmentioning

confidence: 98%

“…For a precise control of the sample position, a high-precision XYZ translator was developed with travel distances of AE 15 mm and 260 mm for the X/Y axes and the Z axis, respectively (Aiura et al, 2020). The translator consists of a mounting ConFlat (CF) flange with an outer diameter (OD) of 203 mm, a traveling CF flange with a 152 mm OD, and five linear drive units, each of which consisting of a linear actuator and a stepping motor.…”

Section: Precise Sample Manipulationmentioning

confidence: 99%

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Beamline commissioning for microscopic measurements with ultraviolet and soft X-ray beam at the upgraded beamline BL-13B of the Photon Factory

Ozawa¹,

Aiura²,

Wakabayashi³

et al. 2022

J Synchrotron Radiat

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Beamline 13 of the Photon Factory has been in operation since 2010 as a vacuum ultraviolet and soft X-ray undulator beamline for X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and angle-resolved photoelectron spectroscopy (ARPES) experiments. The beamline and the end-station at branch B have been recently upgraded, enabling microscopic XPS, XAS, and ARPES measurements to be performed. In 2015, a planar undulator insertion device was replaced with an APPLE-II (advanced planar polarized light emitter II) undulator. This replacement allows use of linear, circular, and elliptical polarized light between 48 and 2000 eV with photon intensities of 109–1013 photons s−1. For microscopic measurements, a toroidal post-mirror was renewed to have more focused beam with profile sizes of 78 µm (horizontal) × 15 µm (vertical) and 84 µm × 11 µm at photon energies of 100 and 400 eV, respectively. A high-precision sample manipulator composed of an XYZ translator, a rotary feedthrough, and a newly developed goniometer, which is essential for microscopic measurements, has been used to control a sample specimen in six degrees of freedom, i.e. translation in the X, Y, and Z directions and rotation in the polar, azimuthal, and tilt directions. To demonstrate the performance of the focused beams, one- and two-dimensional XPS and XAS scan measurements of a copper grid have been performed. It was indicated from analysis of XPS and XAS intensity maps that the actual spatial resolution can be determined by the beam size.

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“…As already pointed out in our previous study (Aiura et al, 2020), the actual beam size depends on the photon energy. Fig.…”

Section: Beam Profile Assessmentsupporting

confidence: 66%

Section: Beam Profile Assessmentmentioning

confidence: 98%

Section: Precise Sample Manipulationmentioning

confidence: 99%

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Beamline commissioning for microscopic measurements with ultraviolet and soft X-ray beam at the upgraded beamline BL-13B of the Photon Factory

Ozawa¹,

Aiura²,

Wakabayashi³

et al. 2022

J Synchrotron Radiat

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“…ARPES using a VG-Scienta SES-200 analyzer was performed at the undulator beamline BL-13B of the Photon Factory (PF), High Energy Accelerator Research Organization (KEK). 40 All PES measurements were conducted at room temperature (300 K). The SnO film was transported to an analysis chamber at the beamline without air exposure using a home-built vacuum suitcase, maintaining pressure below ∼1.5 × 10 −6 Pa.…”

Section: ■ Experimental Methodsmentioning

confidence: 99%

Characteristic Electronic Structure of SnO Film Showing High Hole Mobility

Minohara

Hase

Aiura

2022

J. Phys. Chem. Lett.

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Actual knowledge of the intrinsic electronic characteristics of p-type oxide semiconductors should help guide the design of innovative electronic devices. The electronic characteristics of oxide semiconductors in thin-film form potentially differ from those in the bulk form owing to lattice strain. In this Letter, we report on the empirical band structure of stannous oxide (SnO) film, which has been shown to have a higher hole mobility than the theoretically expected values for SnO in the bulk form. In vacuo angle-resolved photoemission spectroscopy measurements reveal that the uppermost valence band is anisotropic between the out-of-plane and in-plane directions, and more dispersive than the theoretical predictions. Our findings unveil the underlying mechanism of the semiconductor properties of SnO films and suggest a suitable device structure based on the electronic characteristics.

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“…Soft X‐ray photoemission spectroscopy (SX‐PES) using a Gammadata‐Scienta SES‐200 analyzer and O K‐edge XAS measurements were performed at the undulator beamline BL‐13B of the Photon Factory, KEK. [ 46 ] The beam sizes of the vertical and horizontal axes at the sample surface were about 25 and 90 μm, respectively. For SX‐PES and XAS measurements, the samples were transported to an analysis chamber at the beamline without air exposure using the home‐built vacuum suitcase, maintaining pressure below ∼5 × 10 –6 Pa.…”

Section: Experimental Section/methodsmentioning

confidence: 99%

Elaboration of near‐valence band defect states leading deterioration of ambipolar operation in SnO thin‐film transistors

et al. 2021

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Ambipolar transistor operation in SnO thin‐film transistors (TFTs) is a promising character for future practical application, such as in integrated logic devices based on oxide semiconductors, because of its ability to develop them using a single material. However, there are only a few reports that demonstrate the apparent ambipolar operation for SnO TFTs owing to the insufficient knowledge on the reasons for deterioration of device performance. Although a previous study controls the operation mode of SnO TFTs [A. W. Lee et al. Adv. Electron. Mater. 6, 200742 (2020)], an additional passivating layer is required; however, it hinders the benefits of SnO usage. In this study, we provide the mechanism of deterioration of the ambipolar character of bare SnO TFTs, that is, the origin of defect states near the valence band maximum (near‐VB defect). Comprehensive spectroscopic approaches including photoemission, X‐ray emission, and X‐ray absorption spectroscopy, reveal that near‐VB defect states originate from oxygen vacancies, existing at the surface, and also in the entire SnO film. This finding is useful to improve device performance for obtaining the ambipolar operation of SnO TFTs.

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Development of a high-precision XYZ translator and estimation of beam profile of the vacuum ultraviolet and soft X-ray undulator beamline BL-13B at the Photon Factory

Cited by 5 publications

References 39 publications

Beamline commissioning for microscopic measurements with ultraviolet and soft X-ray beam at the upgraded beamline BL-13B of the Photon Factory

Beamline commissioning for microscopic measurements with ultraviolet and soft X-ray beam at the upgraded beamline BL-13B of the Photon Factory

Characteristic Electronic Structure of SnO Film Showing High Hole Mobility

Elaboration of near‐valence band defect states leading deterioration of ambipolar operation in SnO thin‐film transistors

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