Development of a high-repetition-rate mini-TEA CO2 laser

Menyuk, N.; Moulton, Peter F.

doi:10.1063/1.1136176

Cited by 68 publications

(8 citation statements)

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“…[3]). A TEA-CO 2 laser, on the other hand, emits laser pulses with high output energy and a short pulse width (typically, a spike pulse with a pulse width of about 100 ns and a pulse tail of several microseconds) [4][5][6][7][8]. However, a TEA-CO 2 laser is not suitable for high-repetition operation because of the problem of poor discharge uniformity due to residual charge in the laser tube.…”

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confidence: 97%

Longitudinally Excited CO2 Laser with Short Laser Pulse like TEA CO2 Laser

Uno

Nakamura

Goto³

et al. 2009

J Infrared Milli Terahz Waves

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We have developed a longitudinally excited CO 2 laser with a short laser pulse similar to that of TEA and Q-switched CO 2 lasers. A capacitor transfer circuit with a low shunt resistance provided rapid discharge and a sharp spike pulse with a short pulse tail. Specifically, a circuit with a resistance of 10 M Ω provided a spike pulse width of 103.3 ns and a pulse tail length of 61.9 μs, whereas a circuit with a shunt resistance of 100 Ω provided a laser pulse with a spike pulse width of 96.3 ns and a pulse tail length of 17.2 μs. The laser pulses from this longitudinally excited CO 2 laser were used for processing a human tooth without carbonization and for glass marking without cracks.

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confidence: 97%

Longitudinally Excited CO2 Laser with Short Laser Pulse like TEA CO2 Laser

Uno

Nakamura

Goto³

et al. 2009

J Infrared Milli Terahz Waves

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“…Meynuk and Moulton [17] reported that a laser is in operation only for approximately 5.0X10 7 shots. The reason is due to the increase of the delay time between the auxiliary and the main discharge which cause tip erosion of the spark array of the preionizer.…”

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confidence: 99%

A study of uv preionization pulsed tea CO₂ laser

Wang

Meng

Wang

et al. 1989

Journal of the Chinese Institute of Engineers

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A uniform volumetric discharge was obtained by means of an auxiliary UV preionization in a home-made TEA CO 2 laser. The maximum output pulse energy of this laser system was about 12J per pulse with a pulse duration of 80 ns. The ratio of electric field to neutral particle density (E/N) in this laser was 7.6×10 -16 V cm 2 . The peak power and pulse shape of the laser were studied. The time delay between the predischarge and the maindischarge during the stable operation of this laser system has also been studied. It was observed that the laser was operating with uniform glow discharges when the time delayed between the predischarge and the maindischarge was in the range of 1.0 µs to 6.0 µs. The spark array used as a preionizer for producing the UV radiation in this system is new, simple, durable, and can be easily fabricated.

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“…A "mini-TEA" laser, operating at 500 Hz and 20 mJ/pulse, has been developed at the MIT Lincoln Laboratory . 45 We describe here a scaled-up version of the latter device, which is shown schematically in Fig. 3.…”

Section: High-repetition Rate Pulsed Tea Cc^ Lasermentioning

confidence: 99%

“…45 We describe here a scaled -up version of the latter device, which is shown schematically in Fig. 3.…”

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<title>Reactive Etching Of Semiconductor Surfaces By Laser-Generated Free Radicals</title>

et al. 1981

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Reactive etching at silicon and silicon -oxide surfaces is customarily carried out in a fluorocarbon plasma. Under such conditions, a large variety of reactive species is generated, making it extremely difficult to elucidate details of the etching mechanism; in addition, the charged species present in the plasma frequently produce undesirable radiation damage in the finished devices. We have found that dissociation of the parent fluorocarbons by multiple-infrared -photon excitation produces reactive neutral fragments which are capable of etching these surfaces. Etch gases such as CF3Br, CPZHC1, CF300CP3, and SF may be used with poly -Si, Si02, Si3N4, and other substrates; SEM, ESCA, and Auger diagnostics are employed to characterie the reactions occurring at the surface. From these experiments we hope to develop a quantitative model for the reactive etching process.Possible commercial advantages of the laser -etching technique include reduction or elimination of radiation damage, increased etching rates, and improved Si02 /Si specificity.

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Development of a high-repetition-rate mini-TEA CO2 laser

Cited by 68 publications

References 20 publications

Longitudinally Excited CO2 Laser with Short Laser Pulse like TEA CO2 Laser

Longitudinally Excited CO2 Laser with Short Laser Pulse like TEA CO2 Laser

A study of uv preionization pulsed tea CO₂ laser

<title>Reactive Etching Of Semiconductor Surfaces By Laser-Generated Free Radicals</title>

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Development of a high-repetition-rate mini-TEA CO2 laser

Cited by 68 publications

References 20 publications

Longitudinally Excited CO2 Laser with Short Laser Pulse like TEA CO2 Laser

Longitudinally Excited CO2 Laser with Short Laser Pulse like TEA CO2 Laser

A study of uv preionization pulsed tea CO2 laser

<title>Reactive Etching Of Semiconductor Surfaces By Laser-Generated Free Radicals</title>

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A study of uv preionization pulsed tea CO₂ laser