Development of a hybrid inverter through integration of organic and inorganic thin film transistors

Self-aligned metal double-gate junctionless p-channel low-temperature polycrystalline-germanium thin-film transistor with thin germanium film on glass substrate

“…However, they are fabricated through expensive and complex processes, and cannot be used on plastic substrates because of the relatively high processing temperature. Therefore, hybrid CMOSs made of n-channel (n-ch) and p-channel (p-ch) TFTs of different materialsfor example, combinations of amorphous Si and organic semiconductors, 1,2) oxide and organic semiconductors, [3][4][5][6][7][8][9][10][11][12][13][14][15][16] or organic and organic semiconductors [17][18][19][20][21][22][23][24][25][26][27][28] are fabricated through simple and inexpensive LT TFT processes. However, such circuits exhibit low processing speeds even at high operating voltages because they are plagued by problems such as low carrier mobility, a high threshold voltage (V th ), and a large subthreshold slope.…”