Development of a low pressure microwave excited plasma and its application to the formation of microcrystalline silicon films

Abstract

Microwave excited plasma source operating at a low pressure of 1.5Pa was newly developed. This plasma source was successfully applied to the formation of hydrogenated microcrystalline silicon films in a glass substrate with a mixture gas of silane (SiH4), hydrogen (H2), and xenon (Xe). It was found that the crystallinity of films was dramatically improved with decreasing pressure. The crystalline fraction was evaluated to be 82% at a substrate temperature of 400°C, a mixture gas of SiH4∕H2∕Xe: 5∕200∕30SCCM, and a total pressure of 1.5Pa by Raman spectroscopy. The absolute density of hydrogen atoms and the behavior of higher radicals and molecules in the mixture gas were evaluated using vacuum ultraviolet absorption spectroscopy and quadrupole mass spectrometer, respectively. H atom densities were of the order of 1011cm−3. The fraction of H atom density increased, while higher radicals and molecules decreased with decrease in the total pressure. The increase in H atom density and decrease in higher radicals and molecules improved the crystallinity of films in low pressures below 10Pa.