Development of a modal analysis accelerometer based on a tunneling displacement transducer

Scheeper, P.R.; Reynolds, J.K.; Kenny, Thomas W.

doi:10.1109/sensor.1997.635239

Cited by 15 publications

(2 citation statements)

References 3 publications

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“…It can be derived and given by dz (2) which means that the exponential relationship between the tunneling current and the separation gap can be achieved by measuring the slope of the semilog plot of the tunneling current versus the gap change. More detailed descriptions about the tunneling structures and the operation principles can be found in [7]- [33]. Based on the electron tunneling effect, we have built the all-PMMA-based tunneling sensor platform as displacement transducers [34].…”

Section: Operation Methodologymentioning

confidence: 99%

“…Moreover, the high sensitivity in displacement is independent of the lateral size of the electrodes since the tunneling current occurs between two atoms located at opposite electrode surfaces [2], [3]. Due to their small size and high sensitivity, micromachined tunneling transducers make it possible to fabricate miniaturized and inexpensive tunneling sensors with high performance such as accelerometers [4]- [7], magnetometers [8]- [10], infrared radiation sensors [11]- [13], chemical sensors [14], [15], and pressure sensors [16].…”

Section: Introductionmentioning

confidence: 99%

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A micromachined wide-bandwidth magnetic field sensor based on all-PMMA electron tunneling transducer

Wang

Seetala

et al. 2006

IEEE Sensors J.

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All-PMMA-based tunneling magnetic sensors were fabricated by hot embossing replication with silicon templates. The silicon templates had smooth surfaces, positive profiles, and pyramid-like pits with a high aspect ratio. With this fast (20 min), simple (one-step), and repeatable method, the all-PMMA tunneling sensor platform yielded sharp tunneling tips with 75 m in baseline and 50 m in depth. The sensors were assembled and fixed with measurement circuits, after their electrodes were patterned with modified photolithography and Co film was deposited with e-beam evaporation. A natural frequency response of 1.3 kHz was observed, and a tunneling barrier height of 0.713 eV was tested. Due to the quadratic relation between magnetic force and the field, the sensor field response (7 0 10 6 V T 2 ) was also quadratic. The noise voltage at 1 kHz is 0.2 mV, corresponding to a magnet field of 0 46 10 6 T. The bandwidth of this senor is 18 kHz. This new type of sensor platform is promising for the next generation of microsensing applications.

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Section: Operation Methodologymentioning

confidence: 99%