Development of a new powerful computer code CrysVUN++ especially designed for fast simulation of bulk crystal growth processes

Kurz, Matthias; Pusztai, Agneta Maria; Müller, G.

doi:10.1016/s0022-0248(98)01205-6

Cited by 114 publications

(79 citation statements)

References 6 publications

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“…Additionally, the cylindrical geometry and the conductivity difference between the quartz crucible and the alloy result in a complex thermal field that is difficult to characterize. The thermal gradient is estimated using software packages CrysVUn ® and CrysMAS ® which are designed for the global modeling of solidification processes in complex furnaces with axial or translational symmetry [39]. Two different sets of control temperatures were used that correspond to two different thermal gradients, estimated by thermal numerical simulation at G1 = 19 K/cm and G2 = 12 K/cm.…”

Section: Ii1 the Directional Solidification Device Declic-dsimentioning

confidence: 99%

Experimental observation of oscillatory cellular patterns in three-dimensional directional solidification

et al. 2017

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Section: Ii1 the Directional Solidification Device Declic-dsimentioning

confidence: 99%

Experimental observation of oscillatory cellular patterns in three-dimensional directional solidification

et al. 2017

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“…With the existing computing power it is today not possible to solve a global heat transfer model for the whole growth process, where turbulent melt flow is included. But as long as impurity transport is not a major concern, neglecting the melt flow can already reproduce experimental measurements in a satisfactory way [8]. The integral equation to model heat radiation is discretized by piecewise constant elements.…”

Section: Methodsmentioning

confidence: 99%

Transient and quasi‐stationary simulation of heat and mass transfer in Czochralski silicon crystal growth

Voigt¹,

Weichmann²,

Nitschkowski³

et al. 2003

Cryst. Res. Technol.

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The formation of grown-in defects in silicon crystals is controlled by the concentration of intrinsic point defects. Under steady state conditions the type of the prevailing point defect species is linked to the ratio of pull rate and temperature gradient in the crystal at the solidification front. It has been shown that this ratio as well as computed point defect distributions are in good agreement with experimental data. In this paper we compare a coupled transient heat transfer and transient point defect transport model with quasi steady state simulations at various time steps. Both simulations show the same qualitative results, quantitative differences in temperature are less than 1 %. But already for constant pull rates the defect distributions show qualitative differences between transient and quasi steady state simulations. Therefore, for a detailed understanding how defects are related to growth conditions, the thermal history should not be neglected.

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“…The surface temperature of a crystal ingot are calculated by taking account of the heat radiation from a furnace for ingot annealing using a computer code such as CrysUV (Kurz et al, 1999;Molchanov et al, 2002). Then the temperature distribution in the crystal ingot is obtained by a transient heat conduction analysis using the finite element code MSC Marc (MSC Software, 2003).…”

Section: Heat Transfer Analysismentioning

confidence: 99%

Birefringence simulations of single crystals

Kitamura

Miyazaki

2017

Mechanical Engineering Reviews

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Fluoride single crystals such as calcium fluoride (CaF 2 ) belonging to the cubic crystal system and magnesium fluoride (MgF 2 ) belonging to the tetragonal crystal system are utilized as optical elements in high power lithography systems. In such uses of the single crystals, birefringence is an important phenomenon that affects optical performance. Based on the papers published by the present authors, we review the birefringence of CaF 2 and MgF 2 single crystals. Intrinsic birefringence is dealt with in addition to stress birefringence. First of all calculation methods for stress birefringence are presented. They are the Jones calculus, an exact method, and the average stress method, an approximate method, and the relation between the two methods is given. In the stress birefringence simulations after annealing of CaF 2 single crystal, the importance of time-dependent nonlinear deformation behavior of a material called creep is pointed out in calculating residual stress that induces stress birefringence. When the wavelength of light becomes down to the vacuum ultraviolet region, CaF 2 single crystal shows intrinsic birefringence in addition to stress birefringence. Birefringence simulations of a CaF 2 single crystal chamber window of an ArF excimer laser light source are performed by considering both stress birefringence and intrinsic birefringence to evaluate the optical performance and to obtain the optimum condition of CaF 2 single crystal window. MgF 2 single crystal shows intrinsic birefringence even for visible light because of its strong crystal anisotropy. The results of birefringence analyses are shown for MgF 2 single crystal as an example of combining stress birefringence with intrinsic birefringence under a visible light condition.

show abstract

Development of a new powerful computer code CrysVUN++ especially designed for fast simulation of bulk crystal growth processes

Cited by 114 publications

References 6 publications

Experimental observation of oscillatory cellular patterns in three-dimensional directional solidification

Experimental observation of oscillatory cellular patterns in three-dimensional directional solidification

Transient and quasi‐stationary simulation of heat and mass transfer in Czochralski silicon crystal growth

Birefringence simulations of single crystals

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