2015
DOI: 10.1016/j.matchemphys.2015.03.027
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Development of a novel fluorinated n-nc-SiO:H material for solar cell application

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Cited by 12 publications
(7 citation statements)
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“…Surface modification, which can be achieved by etching [24], chemical treatment [25,26], or physical treatment [27,28], provides the opportunities to tune optical, electrical, [29][30][31][32][33][34][35] and interfacial [36-38] material properties. Owing to the availability of reactive groups, mostly soft nucleophiles or electrophiles, most polymer surfaces can be readily modified through chemical grafting by simply exposing the material to an appropriate reagent(s) [1,[7][8][9]14,15,[17][18][19][20][21][22][39][40][41][42][43][44][45][46][47][48][49][50][51][52].…”
Section: Surface Modificationmentioning
confidence: 99%
“…Surface modification, which can be achieved by etching [24], chemical treatment [25,26], or physical treatment [27,28], provides the opportunities to tune optical, electrical, [29][30][31][32][33][34][35] and interfacial [36-38] material properties. Owing to the availability of reactive groups, mostly soft nucleophiles or electrophiles, most polymer surfaces can be readily modified through chemical grafting by simply exposing the material to an appropriate reagent(s) [1,[7][8][9]14,15,[17][18][19][20][21][22][39][40][41][42][43][44][45][46][47][48][49][50][51][52].…”
Section: Surface Modificationmentioning
confidence: 99%
“…Recently, organo-uorine 1 compounds have been adopted for surface modication of paper due, in part, to their hydrophobicity and ease of use. [2][3][4][5] Fluorine based reagents, however, can form toxic hydrogen uoride (HF) or hydrouoric acid when mixed with water or upon degradation. 6 HF penetrates the skin and insidiously destroys underlying body tissues.…”
mentioning
confidence: 99%
“…Furthermore, the a-SiO:H layer showed less light-induced degradation (LID) effect in comparison to the a-Si:H. In fact, several experimental and simulations studies reveal a difference in the LID of 5.7 % [23]. The effect of (n)a-SiO:H layer on the solar cell performance were investigated using simulation and exprementals method in [22][23][24]. The results show that the wide-bandgap a-SiO:H as an n-doped layer can improve the open-circuit voltage Voc as well as the fill factor.…”
Section: Ii3 N-type Layermentioning
confidence: 99%
“…The use of a-SiO:H as the n-type layer increases the use of light in the absorber layer and reduces the optic losses in the non-active regions of the cell. Furthermore, the a-SiO:H layer showed less light-induced degradation (LID) effect in comparison to the a-Si:H. In fact, several experimental and simulations studies reveal a difference in the LID of 5.7 % [23]. The effect of (n)a-SiO:H layer on the solar cell performance were investigated using simulation and exprementals method in [22][23][24].…”
Section: Ii3 N-type Layermentioning
confidence: 99%