Development of a Radiation Detector Based on Silicon Carbide

Ishikawa, Ippei; Kada, Wataru; Sato, F.; Kato, Yushi; Tanaka, Teruya; Iida, Toshiyuki

doi:10.1080/00223131.2008.10875897

Cited by 3 publications

(5 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The table 3 shows the reactions that are taking place in LiH converter following the interactions with the neutrons of Am-Be spectrum. It is observed from the table that elastic scattering reaction, which generates a recoil proton, is dominant (∼ 54%), followed by the reaction producing 7 Li (35−42%). It should be noted that the maximum energy of the recoil proton generated through the elastic scattering reaction can be equal to the energy of incident neutron (in case of headon collision with the hydrogenous material) [36,37].…”

Section: Optimization Of Lih Converter Thickness For Wide Energy Rang...mentioning

confidence: 99%

“…Since, the Am-Be spectrum contains neutrons up to 11 MeV, therefore, the maximum kinetic energy of the generated recoil proton can be up to 11 MeV, depending upon the angle of interaction. Similarly, the 7 Li recoil can be generated with the maximum energy of 4.375 MeV. The range of 4.375 MeV 7 Li ion in LiH is ∼ 20 µm whereas the recoil proton of similar energy can traverse easily up to ∼ 500 µm (calculated using SRIM package [38]).…”

Section: Optimization Of Lih Converter Thickness For Wide Energy Rang...mentioning

confidence: 99%

“…Silicon Carbide (SiC) is a potential candidate material for nuclear radiation detector application due to its wide band-gap (3.25 eV) and excellent electrical/thermal properties [1][2][3][4][5][6][7][8][9][10]. It is used as a sensing material in solid-state radiation detector as in PiN diode or Schottky barrier diode configuration.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Towards radiation hard converter material for SiC-based fast neutron detectors

et al. 2018

View full text Add to dashboard Cite

In the present work, Geant4 Monte-Carlo simulations have been carried out to study the neutron detection efficiency of the various neutron to other charge particle (recoil proton) converter materials. The converter material is placed over Silicon Carbide (SiC) in Fast Neutron detectors (FNDs) to achieve higher neutron detection efficiency as compared to bare SiC FNDs. Hydrogenous converter material such as High-Density Polyethylene (HDPE) is preferred over other converter materials due to the virtue of its high elastic scattering reaction cross-section for fast neutron detection at room temperature. Upon interaction with fast neutrons, hydrogenous converter material generates recoil protons which liberate e-hole pairs in the active region of SiC detector to provide a detector signal. The neutron detection efficiency offered by HDPE converter is compared with several other hydrogenous materials viz., 1) Lithium Hydride (LiH), 2) Perylene, 3) PTCDA. It is found that, HDPE, though providing highest efficiency among various studied materials, cannot withstand high temperature and harsh radiation environment. On the other hand, perylene and PTCDA can sustain harsh environments, but yields low efficiency. The analysis carried out reveals that LiH is a better material for neutron to other charge particle conversion with competent efficiency and desired radiation hardness. Further, the thickness of LiH has also been optimized for various mono-energetic neutron beams and Am-Be neutron source generating a neutron fluence of 10 9 neutrons/cm 2 . The optimized thickness of LiH converter for fast neutron detection is found to be ∼ 500 µm. However, the estimated efficiency for fast neutron detection is only 0.1%, which is deemed to be inadequate for reliable detection of neutrons. A sensitivity study has also been done investigating the gamma background effect on the neutron detection efficiency for various energy threshold of Low-Level Discriminator (LLD). The detection efficiency of a stacked structure concept has been explored by juxtaposing several converter-detector layers to improve the efficiency of LiH-SiC-based FNDs. It is observed that approximately tenfold efficiency improvement has been 1Corresponding author.

show abstract

Section: Optimization Of Lih Converter Thickness For Wide Energy Rang...mentioning

confidence: 99%

Section: Optimization Of Lih Converter Thickness For Wide Energy Rang...mentioning

confidence: 99%

See 1 more Smart Citation

Towards radiation hard converter material for SiC-based fast neutron detectors

et al. 2018

View full text Add to dashboard Cite

show abstract

“…Consequently, advancement in technology has produced steps to tackle some of the challenges through deployment of Physics principles which led to the development of radiation detector (Bell, 2015) which helps in identify the presence of radiation using a system called radiation detector. The detectors can be scintillation, gas or semiconductor radiation detectors (Ouseph, 1975;Ishikawa et al, 2008a;Milbrath et al, 2008).…”

Section: Introductionmentioning

confidence: 99%

“…Alternatively, semiconductor radiation detectors are more available, efficient and cost effective. However, radiation detectors made of semiconductor materials exhibit an unusual behaviour (Ishikawa et al, 2008b), thus, affecting the energy resolution of the system, which is observed to arise from metal-semiconductor interface (Owens, 2014).…”

Section: Introductionmentioning

confidence: 99%

Modeling and Bulk Characterization of 4HSIC Radiation Detector in Sentaurus TCAD Simulation Environment

Garba,

Nasiru,

Abubakar

et al. 2024

dujopas

View full text Add to dashboard Cite

This paper gives an insight into the need for radiation detection and the most commonly flexible and efficient radiation detector. It also examines bulk characteristics of 4H-SiC semiconductor radiation detector with Ni and Ti as metals for the contact. Bulk characterization of the device, including: doping concentration, electrons and holes behaviors, space charge and current densities were carried out. The modeling is conducted using Sentaurus Technology Computer Aided Design (TCAD) to examine charge transport in bulk 4HSiC material. Data obtained were further analyzed through Sentaurus visual, sentaurus Techplot and Excel to clearly determine the characteristics of the device. It is observed that when the semiconductor and metal are in contact, the Fermi-level is established where the doping concentration varied with either magnitude of the doping concentration or nature of the dopant. Similarly, Schottky and ohmic contacts and temperature effect were observed from the device characteristics which demonstrate that, the detector can withstand a temperature from the range of 100K to 700K in no fluctuating state.

show abstract

Spectroscopic performance of Ni/4H-SiC and Ti/4H-SiC Schottky barrier diode alpha particle detectors

2022

View full text Add to dashboard Cite

Advancement in the growth of 4H-SiC with low micropipe densities (∼ 0.11 cm-2) in achieving high pure epitaxial layers, enabled the development of high-resolution 4H-SiC alpha particle Schottky radiation detectors for harsh environments. In particular, the study considers two types of 4H-SiC radiation detectors having Ni and Ti as Schottky contacts. They are fabricated by depositing Ni and Ti on 25 μm thick n-type 4H-SiC by epitaxially growing on 350 μm thick conducting SiC substrates. Electrical characterization and alpha spectral measurements performed on Ni/4H-SiC and Ti/4H-SiC SBDs are reported in this work. The spectral measurements were carried out using 241Am alpha emitting radioactive source. Ni/ 4H-SiC Schottky detector showed a better spectral response with 22.87 keV FWHM (∼ 0.416%) at a reverse bias of 150 V for 5.48 MeV alpha particles while Ti/4H-SiC Schottky detector achieved a resolution of 38.25 keV FWHM (∼ 0.697%) at 170 V reverse bias. This work presented spectral broadening analysis to understand the various factors affecting the energy resolution of the detectors. The extracted charge collection efficiencies (CCEs) are approximately 99% in both the detectors. In addition, polarization effects are not noticed in any of the fabricated detectors. The diffusion length of minority carriers (Lp ) is computed based on the drift-diffusion model by fitting the CCE curve as a function of applied bias, and the values are close to 9 μm and 7 μm for Ni/4H-SiC SBD and Ti/4H-SiC SBD detectors, respectively. Annealing at 400°C for 5 minutes in N2 ambient resulted in resolution of 23.98 keV FWHM (∼ 0.436%) for Ni/4H-SiC SBD detector at -170 V and 36.21 keV FWHM (∼ 0.661%) for Ti/4H-SiC SBD detector at -150 V. Overall Ni/4H-SiC SBD detectors showed superior spectral characteristics and superior resolution when compared to Ti/4H-SiC SBD detectors. However, the Ti/4H-SiC SBD detector fabricated in this work performed better than the previously reported work on a similar device structure. Hence, future work aimed at improving resolution of radiation detectors could also consider Ti/4H-SiC SBDs along with Ni/4H-SiC SBDs.

show abstract

Development of a Radiation Detector Based on Silicon Carbide

Cited by 3 publications

References 10 publications

Towards radiation hard converter material for SiC-based fast neutron detectors

Towards radiation hard converter material for SiC-based fast neutron detectors

Modeling and Bulk Characterization of 4HSIC Radiation Detector in Sentaurus TCAD Simulation Environment

Spectroscopic performance of Ni/4H-SiC and Ti/4H-SiC Schottky barrier diode alpha particle detectors

Contact Info

Product

Resources

About