Development of a real-time temperature measurement technique for SiC wafer during ultra-rapid thermal annealing based on optical-interference contactless thermometry (OICT)

Abstract

Real-time temperature measurement technique with high spatial (≤20 μm) and temporal (≤1 μs) resolutions for SiC wafer during ultra-rapid thermal annealing (URTA) has been developed based on optical-interference contactless thermometry (OICT). This technique consists of hardware (OICT imaging setup) and software (fast temperature extraction program). Under URTA by atmospheric-pressure thermal plasma jet (TPJ), clear variation of optical interference fringes was observed by a high-speed camera (HSC) and then analyzed by a fast temperature extraction program using image preprocessing and a database. 3.5-dimensional (x, y, z and time) temperature distribution in SiC wafer was obtained within 0.43 second.