Development of a robust reverse tone pattern transfer process

Khusnatdinov, Niyaz; Doyle, Gary; Resnick, Douglas J.; Ye, Zhengmao; LaBrake, Dwayne; Milligan, Brennan; Alokozai, Fred; Chen, Jerry

doi:10.1117/12.2260455

Cited by 3 publications

(2 citation statements)

References 11 publications

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“…The exposed Si is then etched using CF 4 /CHF 3 /Ar plasma, and the Al 2 O 3 hard mask is removed via TMAH wet etch (Figure d). This dry lift-off pattern transfer approach, while similar to recent planarization demonstrations, ,, highlights the value of combining ALD with BCP lithography. The pattern transfer method can be easily scaled with decreasing feature sizes once a PS soft mask can be generated from the BCP pattern.…”

Section: Resultssupporting

confidence: 66%

“…We demonstrate that the process has a large tolerance over the quality of the guiding features and that the addition of the homopolymer inks does not compromise the line roughness of the final pattern. Finally, we test the quality of the assembly by implementing a robust “dry lift-off” protocol for pattern transfer based on atomic layer deposition akin to planarization methods. , The results here should also make DSA a more accessible technique to research labs lacking direct access to custom-made polymer mats and brushes or without access to the latest e-beam or immersion lithography. While this work is still done with PS- b -PMMA, which will not extend to sub-10 nm, we anticipate that the self-healing properties on the guiding patterns and the wide process window margins developed here would be applicable to other higher-χ materials that could complement extreme ultraviolet (EUV) patterning.…”

Section: Introductionmentioning

confidence: 99%

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Sequential Brush Grafting for Chemically and Dimensionally Tolerant Directed Self-Assembly of Block Copolymers

Chang

Loo

et al. 2022

ACS Appl. Mater. Interfaces

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We report a method for the directed self-assembly (DSA) of block copolymers (BCPs) in which a first BCP film deploys homopolymer brushes, or “inks”, that sequentially graft onto the substrate’s surface via the interpenetration of polymer molecules during the thermal annealing of the polymer film on top of existing polymer brushes. By selecting polymer “inks” with the desired chemistry and appropriate relative molecular weights, it is possible to use brush interpenetration as a powerful technique to generate self-registered chemical contrast patterns at the same frequency as that of the domains of the BCP. The result is a process with a higher tolerance to dimensional and chemical imperfections in the guiding patterns, which we showcase by implementing DSA using homopolymer brushes for the guiding features as opposed to more robust cross-linkable mats. We find that the use of “inks” does not compromise the line width roughness, and the quality of the DSA as a lithographic mask is verified by implementing a robust “dry lift-off” pattern transfer.

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Section: Resultssupporting

confidence: 66%

Section: Introductionmentioning

confidence: 99%

Sequential Brush Grafting for Chemically and Dimensionally Tolerant Directed Self-Assembly of Block Copolymers

Chang

Loo

et al. 2022

ACS Appl. Mater. Interfaces

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Nanoimprint lithography steppers for volume fabrication of leading-edge semiconductor integrated circuits

2017

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This article discusses the transition of a form of nanoimprint lithography technology, known as Jet and Flash Imprint Lithography (J-FIL), from research to a commercial fabrication infrastructure for leading-edge semiconductor integrated circuits (ICs). Leading-edge semiconductor lithography has some of the most aggressive technology requirements, and has been a key driver in the 50-year history of semiconductor scaling. Introducing a new, disruptive capability into this arena is therefore a case study in a “high-risk-high-reward” opportunity. This article first discusses relevant literature in nanopatterning including advanced lithography options that have been explored by the IC fabrication industry, novel research ideas being explored, and literature in nanoimprint lithography. The article then focuses on the J-FIL process, and the interdisciplinary nature of risk, involving nanoscale precision systems, mechanics, materials, material delivery systems, contamination control, and process engineering. Next, the article discusses the strategic decisions that were made in the early phases of the project including: (i) choosing a step and repeat process approach; (ii) identifying the first target IC market for J-FIL; (iii) defining the product scope and the appropriate collaborations to share the risk-reward landscape; and (iv) properly leveraging existing infrastructure, including minimizing disruption to the widely accepted practices in photolithography. Finally, the paper discusses the commercial J-FIL stepper system and associated infrastructure, and the resulting advances in the key lithographic process metrics such as critical dimension control, overlay, throughput, process defects, and electrical yield over the past 5 years. This article concludes with the current state of the art in J-FIL technology for IC fabrication, including description of the high volume manufacturing stepper tools created for advanced memory manufacturing.

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Temperature and oxygen concentration effects on anisotropy in chromium hard mask etching for nanoscale fabrication

Staaks

Dhuey

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Chromium and its oxides are valuable as functional materials and plasma-etching hard masks in micro- and nanofabrication. While the continuous decrease in feature sizes opens new opportunities for applications of patterned chromium, the demands placed on the patterning process require a new level of mechanistic understanding. In this work, we investigate plasma etching with chlorine/oxygen chemistry using temperature and oxygen concentration as a means to controllably pattern chromium at the nanometer level. Building on our previous studies on blanket film chromium etching, we look here at patterned trenches 15–100 nm wide in 20 and 10 nm thick chromium films. We vary oxygen concentrations from 1.5% to 81% at substrate temperatures of +20 and −50 °C, respectively. Feature and trench profiles are evaluated from high-resolution cross-sectional SEM images. The ternary chromium etch product shows very different profiles as oxygen, temperature, and feature size are varied. We find the highest anisotropy at −50 °C and 50% oxygen concentration. Etch results suggest that the redeposition of nonvolatile intermediate reaction compounds enhances anisotropy at low temperature, whereas re-emission of reactive species causes undercut at the higher etching temperature.

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Development of a robust reverse tone pattern transfer process

Cited by 3 publications

References 11 publications

Sequential Brush Grafting for Chemically and Dimensionally Tolerant Directed Self-Assembly of Block Copolymers

Sequential Brush Grafting for Chemically and Dimensionally Tolerant Directed Self-Assembly of Block Copolymers

Nanoimprint lithography steppers for volume fabrication of leading-edge semiconductor integrated circuits

Temperature and oxygen concentration effects on anisotropy in chromium hard mask etching for nanoscale fabrication

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