Development of a standard method for quantitative depth profile analysis of zinc-based metallic coatings by direct current glow discharge optical emission spectroscopy

Bengtson, Arne; Hänström, Sofia; Piccolo, Eugenio Lo; Zacchetti, N.; Meilland, R.; Hocquaux, H.

doi:10.1002/(sici)1096-9918(199908)27:8<743::aid-sia568>3.0.co;2-o

Cited by 34 publications

(33 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The concept of constant emission yield (Y), defined as the emitted light per unit sputtered mass of an element, is commonly used for quantitative depth profile analysis of conducting coatings using dc-GD-OES [40,41] and successful results are obtained. However, it is known that Y sometimes depends on the plasma operating conditions (in one study it was concluded [42,43] that although the pressure, voltage, and current have some impact on Y, the emission yield is about four times more sensitive to changes in voltage or current than it is to changes in pressure).…”

Section: Radiofrequency Glow Discharge-optical Emission Spectrometrysupporting

confidence: 76%

Radiofrequency glow-discharge devices for direct solid analysis

Pisonero

Costa

Pereiro

et al. 2004

Analytical and Bioanalytical Chemistry

View full text Add to dashboard Cite

The enormous potential of radiofrequency glow discharges (rf-GD) as photon, atom, or ion sources, coupled to spectrometric techniques, for rapid direct analysis of almost any conductor, semiconductor, or insulating material with good in-depth resolution has been demonstrated world-wide. This outstanding performance has prompted a great effort to develop and characterise rf-GD for direct materials analysis in recent years. The state of the art of rf-GD coupled to atomic absorption spectrometry, optical emission spectrometry, and mass spectrometry for direct solid analysis is reviewed here. A description of the principles of operation of the rf-GD and attempts to model these discharges are also given. Rf-GD instrumentation, both developed at research laboratories and commercially available, is described. Several practical examples are given demonstrating the capabilities of these techniques for bulk and depth-profile analysis. Finally, the research gaps to be filled for full implementation of rf-GD spectrometric techniques in industry and research centres alike for materials science studies and technical development are discussed.

show abstract

Section: Radiofrequency Glow Discharge-optical Emission Spectrometrysupporting

confidence: 76%

Radiofrequency glow-discharge devices for direct solid analysis

Pisonero

Costa

Pereiro

et al. 2004

Analytical and Bioanalytical Chemistry

View full text Add to dashboard Cite

show abstract

“…1(a), the birth date of applied surface analysis can be determined fairly accurately by extrapolation of the curve depicting the number of publications with that keyword as a function of the publishing year, and is found to be 1970 (š1 year). Figure 1(b) shows the development of AES, 1,2 SIMS 3 and GDOES 4,5 in comparison. The developments of AES and SIMS are almost parallel but GDOES is obviously less frequently used and still far from saturation whereas both AES and SIMS are now mature techniques.…”

Section: Introductionmentioning

confidence: 99%

Advances in sputter depth profiling using AES

Hofmann¹

2003

Surface & Interface Analysis

View full text Add to dashboard Cite

Sputter depth profiling using AES is a routinely applied method in surface, interface and thin-film analysis. After about 30 years of constant progress the present state is characterized by improved instrumentation, e.g. sample rotation capabilities and low-energy ion guns, as well as by improved quantification methods for the raw data depth profiles. Profile quantification by reconstruction of the original in-depth distribution of composition using the so-called (atomic) mixing-roughness-information depth (MRI) model has proved to be a powerful tool for extracting more precise and extended information of the measured profiles, e.g. quantification with submonolayer accuracy, intrinsic determination of the sputtering rate and determination of localized interdiffusion coefficients as low as 10 −22 m 2 s −1 were obtained. Because the MRI model is based on physically well-defined parameters, it can be applied successfully to other profiling techniques such as SIMS or GDOES. Although in many cases the MRI model can be applied in its original version, some materials require modification by a preferential sputtering coefficient. Further modifications will be necessary to take care of non-linear effects in the concentration dependence and in the compositional distribution within the atomic mixing zone. In summary, quantitative depth profiling using AES has now attained an advanced stage, where its combination with the MRI model is being introduced in commercial instrument software.

show abstract

“…Work in recent years has been very successful, providing a continually expanding range of applications for quantitative GD-OES . 6. Acknowledgements…”

Section: Developments In Near-surface Analysismentioning

confidence: 99%

Glow Discharge Optical Emission Spectrometry – Activities and Opportunities in the Field of Depth Profile Analysis

Bengtson

Hänström

2002

ISIJ International

Self Cite

View full text Add to dashboard Cite

SwedenGlow discharge optical emission spectroscopy (GD-OES) as a depth profiling teohnique is briefly reviewed, The quantification technique based on emission yields, defin8d as the analytical signal per unit weight of the analyte, is described. Current standardisation work on applications to zinc and aluminium based metallic ooatings is reviewed. Recent work on non-conduotive applications using radio frequency (RF) sources is presented. It is shown that practioal possibilities to determine disoharge parameters exist, but is more complex to use than for the DC source. Furthermore, the strong influence of hydrogen on emission yields is demonstrated. A "matnx correction" technique to deal with this probl8m is discussed. It is also shown that in spite of all the corrective measures, there still exist artefacts not completely understood, making it neoessary to do "matrix-matched" calibrations for certain applications. For thin film applications, it is demonstrated that state-of-the-art GD-OES system8 are capable of a depth resolution similar to e.g. SIMS and AES. For quantifioation of very thin layers, the hydrogen corr80tion must be considered, In addition, it is shown that short-lived molecular emission oan influence the analyiioal results. A method to deal with this effect is presented and discussed,

show abstract

Development of a standard method for quantitative depth profile analysis of zinc-based metallic coatings by direct current glow discharge optical emission spectroscopy

Cited by 34 publications

References 6 publications

Radiofrequency glow-discharge devices for direct solid analysis

Radiofrequency glow-discharge devices for direct solid analysis

Advances in sputter depth profiling using AES

Glow Discharge Optical Emission Spectrometry – Activities and Opportunities in the Field of Depth Profile Analysis

Contact Info

Product

Resources

About