Development of actinic full-field EUV mask blank inspection tool at MIRAI-Selete

Terasawa, Tsuneo; Yamane, Takeshi; Tanaka, Toshihiko; Iwasaki, Teruo; Suga, Osamu; Tomie, Toshihisa

doi:10.1117/12.813602

Cited by 33 publications

(18 citation statements)

References 7 publications

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“…The development of the current tool is based on the concept developed by AIST and MIRAI-ASET [19] and finished as a full-field prototype by MIRAI-SELETE [12,13,14]. In 2011 the core technology was transferred to Lasertec with a goal to develop an HVM tool for 16 nm within two years (see Figure 1 for the program overview) with technical support of EIDEC.…”

Section: Abi Program Overview and Statusmentioning

confidence: 99%

EUV actinic blank inspection: from prototype to production

Tchikoulaeva

Miyai

Suzuki

et al. 2013

Extreme Ultraviolet (EUV) Lithography IV

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The availability of actinic blank inspection is one of the key milestones for EUV lithography on the way to high volume manufacturing. Placed at the very beginning of the mask manufacturing flow, blank inspection delivers the most critical data set for the judgment of the initial blank quality and final mask performance. From all actinic metrology tools proposed and discussed over the last years, actinic blank inspection (ABI) tool is the first one to reach the pre-production status. In this paper we give an overview of EIDEC-Lasertec ABI program, provide a description of the system and share the most recent performance test results of the tool for 16 nm technology node.

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Section: Abi Program Overview and Statusmentioning

confidence: 99%

EUV actinic blank inspection: from prototype to production

Tchikoulaeva

Miyai

Suzuki

et al. 2013

Extreme Ultraviolet (EUV) Lithography IV

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“…The defect detection sensitivity of the actinic inspection system was evaluated with programmed defects on a mask blank 10,11 . The programmed defects consisted of 2.5 nm-high dots and 2.5 nm-deep holes on the quartz substrate.…”

Section: Defect Detection Sensitivitymentioning

confidence: 99%

Actinic EUVL mask blank inspection and phase defect characterization

Yamane¹,

Iwasaki²,

Tanaka³

et al. 2009

SPIE Proceedings

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We have developed an actinic full-field mask blank inspection system to detect multilayer phase defects with dark field imaging. Using this system a non-commercial mask was inspected and real defects were detected by setting the system at low false detection threshold. A 1.5 mm square area (containing no absorber) was inspected three times, and probabilities of defect detection and false detection were evaluated. Of the total number detected, 81.5 % of them exhibited 100% percent probability of detection, while 0.8 % of them indicated false detection. The same area was also inspected with a conventional inspection system, and both inspection results then were compared. Among the defects detected, 94 % of them could be detected only with the actinic system, while 1.1 % of them could be detected only with the conventional laser-based inspection system. The detected defects were observed with AFM and SEM. In summary, phase defects smaller than 100 nm could be detected only with the actinic system, while particles smaller than 200 nm could be detected only with the conventional system.

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“…[1][2][3][4][5][6][7][8][9] To address this issue, we have developed an actinic full-field EUVL mask blank inspection system to detect multilayer phase defects by employing a dark field imaging technique. [10][11][12][13][14] Based on our estimation of impact of a phase defect on a wafer for 22 nm HP devices, we maintain that our target of inspection sensitivity was to capture a phase defect caused by a 1.5 nm-high and 40 nm-wide protrusion on a multilayer surface. In this system, the light scattered from a mask blank surface reaches a CCD camera where a defect is captured as a spot signal brighter than a pre-determined threshold.…”

Section: Introductionmentioning

confidence: 99%

Improvement of actinic blank inspection and phase defect analysis

Yamane¹,

Tanaka²,

Terasawa³

et al. 2010

SPIE Proceedings

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We have developed an actinic full-field inspection system to detect multilayer phase defect with dark field imaging. A new CCD camera was installed onto the system with an objective of throughput and inspection sensitivity improvement. As the result, the throughput was improved from 14.25 to 4.75 hours per plate, and the detection probability for 1.2 nmhigh 40 nm-wide defect was found to be 95.7 %. This means that the system has a potential of its extendibility to beyond 22 nm HP inspection.

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Development of actinic full-field EUV mask blank inspection tool at MIRAI-Selete

Cited by 33 publications

References 7 publications

EUV actinic blank inspection: from prototype to production

EUV actinic blank inspection: from prototype to production

Actinic EUVL mask blank inspection and phase defect characterization

Improvement of actinic blank inspection and phase defect analysis

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