Development of Alkaline Solvent Stripper for Wafer Level Package

Abstract

In this paper, the advantage and limitation of different alkali photoresist stripper is reviewed. Different from traditional dry film stripper, tetramethyl ammonium hydroxide is adopted to replace potassium hydoxide as an etchant to prevent precipitation. In details, the substrate protection, such as Al, Cu, Ag and Sn, is studied, and angstrom level etch rate is received with the carefullydesigned inhibitor system; Secondly, the effective photoresist removal performance is acheived with the components balance; In the end, the cleaning mechanism and capability of this novel photoresist removal stripper are disclosed.

(Invited) Development of Mask 3D Virtual Aberration Model to Predict Pattern Best Focus Deviation

“…This will cause not only complexity but also accuracy issue during simulation of OPC and SMO. Thus, currently, most of efforts are focused on the area to improve accuracy of OPC and SMO simulation [1][2][3]. As a result, good improvements have been achieved so far.…”