Development of All-Around SiO2/Al2O3 Gate, Suspended Silicon Nanowire Chemical Field Effect Transistors Si-nw-ChemFET

Lale, Ahmet; Grappin, Auriane; Mazenq, Laurent; Bourrier, David; Lecestre, Aurélie; Launay, Jérôme; Temple‐Boyer, Pierre

doi:10.3390/proceedings1040419

Cited by 3 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Transistors will show "current crowding" behavior at low V ds when the device has a nonohmic source/drain contact, this may be caused by wrong metal contact with active material, or high bulk density of states (DOS). [16] Figure 4 shows the linear region (V ds from 0 to 0.5 V) output characteristics of the ZnO 3D device deposited at 120 • C and there is no nonlinear drain current phenomenon. The source/drain contact's quality of the ZnO 3D device is better evaluated by depicting the derivative of the output curves (dI ds /dV ds ) at low V ds region (V ds < 0.5 V), which is also shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology

Sun

Hao

et al. 2022

Chinese Phys. B

View full text Add to dashboard Cite

Three-dimensional (3D) vertical architecture transistors represent an important technological pursuit, which have distinct advantages in device integration density, operation speed, and power consumption. However, the fabrication processes of such 3D devices are complex, especially in the interconnection of electrodes. In this paper, we present a novel method which combines suspended electrodes and focused ion beam (FIB) technology to greatly simplify the electrodes interconnection in 3D devices. Based on this method, we fabricate 3D vertical core-double shell structure transistors with ZnO channel and Al2O3 gate-oxide both grown by atomic layer deposition. Suspended top electrodes of vertical architecture could be directly connected to planar electrodes by FIB deposited Pt nanowires, which avoid cumbersome steps in the traditional 3D structure fabrication technology. Both single pillar and arrays devices show well behaved transfer characteristics with an I on/I off current ratio greater than 106 and a low threshold voltage around 0 V. The ON-current of the 2 × 2 pillars vertical channel transistor was 1.2 μA at the gate voltage of 3 V and drain voltage of 2 V, which can be also improved by increasing the number of pillars. Our method for fabricating vertical architecture transistors can be promising for device applications with high integration density and low power consumption.

show abstract

Section: Resultsmentioning

confidence: 99%

Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology

Sun

Hao

et al. 2022

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

“…These characteristics making it a leader in future applications and an ideal candidate in a small industry, real-time detection, and a good sensitivity caused by high surface-to-volume ratio. In addition, the SiNWISFET can be easily integrated with CMOS reading circuits, its manufacture is reliable and at low cost [4,5].…”

Section: Introductionmentioning

confidence: 99%

Study of Parameters Influencing on the Performance of SiNW ISFET Sensor

Ayadi

Hajji

Galadi

et al. 2021

Lecture Notes in Electrical Engineering

Self Cite

View full text Add to dashboard Cite

In recent years, Silicon nanowires (SiNW)-based ISFET devices have been selected as promising better sensors because of their advantages such as realtime detection and the good sensitivity caused by high surface-to-volume ratio. In this work, a mathematical model is evaluated to study the performance of the SiNW ISFET sensor. Furthermore, the effects of the parameters such as the NW width (W top ) and the gate insulator capacity C OX on the performance of the SiNW ISFET sensor are investigated. The planar-ISFET structure and Si-nw-ISFET technology are also examined in our simulation and compared. Finally, the mathematical model of SiNW ISFET is verified with the experimental measurements and with other models indicated in the literature, gives a good accuracy at different pH values.

show abstract

Simulation and Performance Study of Silicon Nanowire (Si-NW) Field-Effect Transistor (FET) pH Microsensor

Ayadi

Hajji

Madani

et al. 2020

Lecture Notes in Electrical Engineering

View full text Add to dashboard Cite

Development of All-Around SiO2/Al2O3 Gate, Suspended Silicon Nanowire Chemical Field Effect Transistors Si-nw-ChemFET

Cited by 3 publications

References 9 publications

Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology

Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology

Study of Parameters Influencing on the Performance of SiNW ISFET Sensor

Simulation and Performance Study of Silicon Nanowire (Si-NW) Field-Effect Transistor (FET) pH Microsensor

Contact Info

Product

Resources

About