Development of an Antireflection Layer Using a LDS Based on β-SiC Nanoparticles

Benfadel, K.; Kaci, S.; Hamidouche, Fahim; Keffous, A.; Benmounah, Abdelbaki; Manseri, A.; Achacha, S.; Mahmoudi, B.; Menari, H.

doi:10.1007/s12633-020-00551-w

Cited by 4 publications

(2 citation statements)

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“…By simply scanning a pristine polymer, composite structures composed of carbon-based NCs can be directly patterned, allowing for the rapid fabrication of flexible devices. − Previously, it has been indicated that if the irradiated polymer is a silicone polymer, namely, polydimethylsiloxane (PDMS), the resulting composite structure can also contain silicon carbide NCs (SiC-NCs). − Bulk SiC is a well-known semiconductor already implemented in a variety of commercially available electronic and photonic devices. In recent years, SiC-NCs have slowly been gaining attention as an up-and-coming material with the potential to outperform previously existing NCs. , Although the number of studies regarding SiC-NCs is still relatively less compared to that of other NCs, the presently reported results are highly promising and indicate the advantages of using SiC-NCs for semiconducting electronic units, solar cells, and fluorescence-based sensors . However, for the structures patterned by the laser-induced modification of silicone polymers, material properties distinctive of SiC-NCs have not been reported, possibly due to the low SiC-NC content.…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, SiC-NCs have slowly been gaining attention as an up-and-coming material with the potential to outperform previously existing NCs. 19,20 Although the number of studies regarding SiC-NCs is still relatively less compared to that of other NCs, the presently reported results are highly promising and indicate the advantages of using SiC-NCs for semiconducting electronic units, 21 solar cells, 22 and fluorescence-based sensors. 23 However, for the structures patterned by the laser-induced modification of silicone polymers, material properties distinctive of SiC-NCs have not been reported, possibly due to the low SiC-NC content.…”

Section: ■ Introductionmentioning

confidence: 99%

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Direct Writing of Fluorescent Semiconducting Nanoparticles on Polydimethylsiloxane by Ultrashort-Pulsed Laser Processing: Implications for Electronic and Photonic Device Fabrication

Hayashi

Terakawa

2023

ACS Appl. Nano Mater.

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Laser direct-write (LDW) methods offer the rapid, on-demand, and high-resolution patterning of a variety of nanocrystals (NCs). Out of the many LDW methods, the laser-induced modification method is an attractive method as NCs can be directly patterned on polymers without supplementary preparation steps. Previously, it has been indicated that the laser irradiation of polydimethylsiloxane results in composite structures composed of graphitic carbon crystals (GCs) and silicon carbide NCs (SiC-NCs). However, material properties distinctive of SiC-NCs have not been reported for the resulting structures owing to the low formation content relative to those of GCs. In this study by utilizing a high-repetition femtosecond laser, we demonstrate the controlled formation of GCs and SiC-NCs to achieve a composite structure exhibiting a measurable semiconducting behavior for the first time. Moreover, photoluminescence emissions distinctive of fluorescent molecular-sized SiC-NCs were observed from the resulting structures. The presented results will trigger a wave of ideas utilizing ultrashort-pulsed lasers for the laser-induced modification of polymers toward the fabrication of a wide range of electronic and photonic devices, such as memory storage devices, photovoltaics, and optical sensors.

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