Development of an original model for the synthesis of silicon nanodots by Low Pressure Chemical Vapor Deposition

Cocheteau, Vanessa; Mur, P.; Billon, T.; Scheid, E.; Caussat, Brigitte

doi:10.1016/j.cej.2008.02.027

Cited by 6 publications

(13 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, this choice does not limit the interest of the model because silylene is the main unsaturated species created in the gas phase. Moreover, it is also well known that the contribution to deposition of polysilanes of an order higher than 2 is negligible in LPCVD conditions [15,24].…”

Section: Homogeneous Reactionsmentioning

confidence: 99%

“…Numerous authors have developed numerical models of CVD reactors calculating silicon deposition rates from silane and the homogeneously born species for given operating conditions [15,[21][22][23]. However, to date, none of these researchers has studied the first stages of deposition with the exception of a previous study by our group [24]. By comparing experimental and calculated NC deposition rates using the Computational Fluid Dynamics (CFD) code Fluent, it has been observed that the classical kinetic laws of the literature largely over-estimate deposition rates for these ultrathin layers.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Multi-scale modelling of silicon nanocrystal synthesis by Low Pressure Chemical Vapor Deposition

et al. 2011

Self Cite

View full text Add to dashboard Cite

Section: Homogeneous Reactionsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Multi-scale modelling of silicon nanocrystal synthesis by Low Pressure Chemical Vapor Deposition

et al. 2011

Self Cite

View full text Add to dashboard Cite

“…Si NDs are synthesized in a Tokyo Electronic Limited (TEL) industrial vertical tubular hot wall LPCVD reactor which contains 170 silicon wafers 8' in diameter as detailed elsewhere 3 . We use the CFD Fluent software (Fluent 6.1.18) to solve the governing equations of mass, momentum, and reactive species transport and predict gas flow and species concentration versus position in the reactor.…”

Section: Fluent Simulation Of the Industrial Processmentioning

confidence: 99%

“…But we wish here to analyse from one simulation to another the influences of the carrier gas and dilution ratio on the deposition rates obtained along the load. Clearly, the objective here is to sharply decrease the total deposition rate in maintaining a uniform value along the load, so as to increase the deposition duration to values greater than 60 s. With such run durations, the unsteady regime corresponding to the filling-in of the reactor and to establishment of reactive mass transfers will become negligible in comparison with the steady state regime 3 . Silane dilution ratios comprised between 75 and 95 vol.…”

Section: Fluent Simulation Of the Industrial Processmentioning

confidence: 99%

“…In particular, NDs deposition in industrial LPCVD reactors involves run durations as low as 10 s. In such conditions, it has been observed that this step has not a convenient reproducibility and in addition NDs are not deposited uniformly from wafer to wafer on an industrial load involving more than 150 wafers 3 . Moreover, it has been shown 4 that the kinetic laws established for conventional thick silicon films, (i.e.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Modeling of Silicon Nanodots Nucleation and Growth Deposited by LPCVD on SiO2 : From Molecule/surface Interactions to Reactor Scale Simulations

et al. 2006

View full text Add to dashboard Cite

We present first results combining models at continuum and atomistic (DFT) levels to improve understanding of key mechanisms involved in silicon nanodots (NDs) synthesis on SiO2 by Low Pressure Chemical Vapor Deposition (LPCVD) from silane SiH4. In particular, by simulating an industrial LPCVD reactor using the CFD code Fluent, we find that the deposition time could be increased and then the reproducibility and uniformity of NDs deposition could be improved when highly diluting silane in a carrier gas. A consequence of this high dilution seems to be that the contribution to deposition of unsaturated species such as silylene SiH2 highly increases. This result is important since our first DFT calculations have shown that silicon chemisorption on silanol Si-OH or siloxane Si-O-Si bonds present on SiO2 substrates could only proceed from silylene (and probably from other unsaturated species). The silane saturated molecule could only contribute to NDs growth, i.e. silicon chemisorption on already deposited silicon bonds. Increasing silylene contribution to deposition in highly diluting silane could then also exalt silicon nucleation on SiO2 substrates and then increase NDs density.

show abstract

Surface‐Functionalization‐Mediated Direct Transfer of Molybdenum Disulfide for Large‐Area Flexible Devices

Shinde

Das

Hoang

et al. 2018

Adv Funct Materials

View full text Add to dashboard Cite

The transfer of synthesized large‐area 2D materials to arbitrary substrates is expected to be a vital step for the development of flexible device fabrication processes. The currently used hazardous acid‐based wet chemical etching process for transferring large‐area MoS2 films is deemed to be unsuitable because it significantly degrades the material and damages growth substrates. Surface energy‐assisted water‐based transfer processes do not require corrosive chemicals during the transfer process; however, the concept is not investigated at the wafer scale due to a lack of both optimization and in‐depth understanding. In this study, a wafer‐scale water‐assisted transfer process for metal–organic chemical vapor‐deposited MoS2 films based on the hydrofluoric acid treatment of a SiO2 surface before the growth is demonstrated. Such surface treatment enhances the strongly adhering silanol groups, which allows the direct transfer of large‐area, continuous, and defect‐free MoS2 films; it also facilitates the reuse of growth substrate. The developed transfer method allows direct fabrication of flexible devices without the need for a polymeric supporting layer. It is believed that the proposed method can be an alternative defect‐ and residue‐free transfer method for the development of MoS2‐based next‐generation flexible devices.

show abstract

Development of an original model for the synthesis of silicon nanodots by Low Pressure Chemical Vapor Deposition

Cited by 6 publications

References 27 publications

Multi-scale modelling of silicon nanocrystal synthesis by Low Pressure Chemical Vapor Deposition

Multi-scale modelling of silicon nanocrystal synthesis by Low Pressure Chemical Vapor Deposition

Modeling of Silicon Nanodots Nucleation and Growth Deposited by LPCVD on SiO2 : From Molecule/surface Interactions to Reactor Scale Simulations

Surface‐Functionalization‐Mediated Direct Transfer of Molybdenum Disulfide for Large‐Area Flexible Devices

Contact Info

Product

Resources

About