Development of ballistic hot electron emitter and its applications to parallel processing: active-matrix massive direct-write lithography in vacuum and thin-film deposition in solutions

Koshida, Nobuyoshi; Kojima, Akira; Ikegami, Naokatsu; Suda, Reiji; Yagi, Mamiko; Shirakashi, Jun–ichi; Miyaguchi, Hiroshi; Muroyama, Masanori; Yoshida, Shinya; Totsu, Kentaro; Esashi, Masayoshi

doi:10.1117/1.jmm.14.3.031215

Cited by 10 publications

(3 citation statements)

References 21 publications

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“…The corresponding electron temperature are far from the thermal equilibrium. The measured emission angle dispersion is ±10°with respect to the surface normal [11].…”

Section: Applications Of Nc-si Quasiballistic Electron Source (1) Emi...mentioning

confidence: 86%

(Invited) Emerging Applications of Nanostructured Porous Silicon

Koshida

2018

ECS Trans.

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Electrochemical anodization of single-crystalline silicon (c-Si) renders it porous via a self-organized propagation of nano- to micro-scale pores. Porous silicon (PS) layer fabricated under the appropriate process parameters consists of highly packed quantum-size nanocrystalline silicon (nc-Si) dots. Current topics on its application studies are discussed here. It is shown that the use of luminescent self-standing PS layers as a starting material for fragmentation is very effective to improve the fabrication yield of colloidal nc-Si dots. The efficiency of quasiballistic electron emission from an nc-Si diode is remarkably enhanced by using monolayer graphene as a surface electrode. Mask-less parallel lithography under an active-matrix drive and reductive thin film deposition have been developed. The non-resonant, broad-band, and low-distortion sound emission based on thermos-acoustic effect in nc-Si can reproduce complicated ultrasound signals. This is applicable to compact ultrasound source for analyzing ultrasonic communication mechanism between mice.

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“…The corresponding electron temperature are far from the thermal equilibrium. The measured emission angle dispersion is ±10°with respect to the surface normal [11].…”

Section: Applications Of Nc-si Quasiballistic Electron Source (1) Emi...mentioning

confidence: 86%

(Invited) Emerging Applications of Nanostructured Porous Silicon

Koshida

2018

ECS Trans.

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“…4,5 Applying a positive voltage to the top contact, injected electrons are accelerated toward the surface by multiple-tunneling cascade in a chain of nc-Si dots, 6 and then emitted through the surface thin film. In comparison with conventional cold cathodes, there are some advantageous features in this emitter: extremely high mean energies of as-emitted electrons (5-7 eV at an applied voltage of 15-20 V), 4 surface emissivity with a small angle dispersion (±10 • to the surface normal), 7 low sensitivity of emission to ambient pressure, and compatibility with planar process for device fabrication and with active-matrix drive. The usefulness of the nc-Si emitter has been demonstrated in vacuum (parallel electron beam (EB) lithography), 7 in atmospheric-pressure gases (VUV emission from Xe atoms), 8 and in aqueous solutions (H 2 generation).…”

mentioning

confidence: 99%

“…In comparison with conventional cold cathodes, there are some advantageous features in this emitter: extremely high mean energies of as-emitted electrons (5-7 eV at an applied voltage of 15-20 V), 4 surface emissivity with a small angle dispersion (±10 • to the surface normal), 7 low sensitivity of emission to ambient pressure, and compatibility with planar process for device fabrication and with active-matrix drive. The usefulness of the nc-Si emitter has been demonstrated in vacuum (parallel electron beam (EB) lithography), 7 in atmospheric-pressure gases (VUV emission from Xe atoms), 8 and in aqueous solutions (H 2 generation). 9,10 When the nc-Si emitter is driven in metal salt solutions, ballistic hot electrons induces the reductive reaction leading to the deposition of thin metal films.…”

mentioning

confidence: 99%

Reductive Deposition of Thin Cu Films Using Ballistic Hot Electrons as a Printing Beam

Suda

Yagi

Kojima

et al. 2016

J. Electrochem. Soc.

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Alternative deposition of thin solid films is demonstrated using a nanocrystalline silicon ballistic electron emitter. Emitted ballistic hot electrons impinge upon a CuCl2-solution-coated Si substrate that is located in proximity close to the emitter. It is shown from spectroscopic characterizations that thin Cu films are deposited onto the target substrate with no contaminations. As-emitted ballistic hot electrons with energies of 5–7 eV promote preferential reduction of Cu2+ ions within the penetration depth in the solution followed by the nuclei formation for growth of thin film. The presented printing scheme is also available for oxidized Si substrates. The direct reduction model is supported separately by cyclic voltammetry analyses on the reducing activity of ballistic electrons.

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Porous Silicon Ballistic Hot Electron Emitter

Koshida¹

2016

Handbook of Porous Silicon

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Development of ballistic hot electron emitter and its applications to parallel processing: active-matrix massive direct-write lithography in vacuum and thin-film deposition in solutions

Cited by 10 publications

References 21 publications

(Invited) Emerging Applications of Nanostructured Porous Silicon

(Invited) Emerging Applications of Nanostructured Porous Silicon

Reductive Deposition of Thin Cu Films Using Ballistic Hot Electrons as a Printing Beam

Porous Silicon Ballistic Hot Electron Emitter

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