Development of Carbon Rich Spin-on Sidewall Material

Yaguchi, Hiroaki; Hsu, Dennis Shu-Hao; Maruyama, Daisuke; Sakaida, Yasushi; Sassa, Suguru; Sakamoto, Rikimaru; Wang, Walter; Huang, Chieh-Chen; Wu, Wen-Bin; Shih, Chiang-Lin; Ho, Bang-Ching

doi:10.2494/photopolymer.23.193

Cited by 2 publications

(2 citation statements)

References 5 publications

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“…Much work has been dedicated to the interfacial tension. [1][2][3][4] For a fluid interface, there are (at least) three different aspects in which its size can be varied, each of which may affect the interfacial tension:…”

Section: Introductionmentioning

confidence: 99%

The influence of the liquid slab thickness on the planar vapor–liquid interfacial tension

Werth

Lishchuk

Horsch

et al. 2013

Physica A: Statistical Mechanics and its Applications

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One of the long standing challenges in molecular simulation is the description of interfaces. On the molecular length scale, finite size effects significantly influence the properties of the interface such as its interfacial tension, which can be reliably investigated by molecular dynamics simulation of planar vapor-liquid interfaces. For the Lennard-Jones fluid, finite size effects are examined here by varying the thickness of the liquid slab. It is found that the surface tension and density in the center of the liquid region decreases significantly for thin slabs. The influence of the slab thickness on both the liquid density and the surface tension is found to scale with 1/S 3 in terms of the slab thickness S, and a linear correlation between both effects is obtained. The results corroborate the analysis of Malijevský and Jackson, J. Phys.: Cond. Mat. 24: 464121 (2012), who recently detected an analogous effect for the surface tension of liquid nanodroplets.

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Section: Introductionmentioning

confidence: 99%

The influence of the liquid slab thickness on the planar vapor–liquid interfacial tension

Werth

Lishchuk

Horsch

et al. 2013

Physica A: Statistical Mechanics and its Applications

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“…But the major problem of SAQP is high cost due to its process complexity derive from multiple etch steps. For more cost-effective double patterning, several techniques which only use clean track tool were proposed [1][2][3][4][5][6]. One of the representative of these techniques is known as dual-tone development (DTD).…”

Section: Introductionmentioning

confidence: 99%

Development of Materials-based Pitch Split Process

Hori

Watanabe

Tsunoda

et al. 2016

J. Photopol. Sci. Technol.

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There are several options for sub-10nm fabrication such as extreme ultra violet (EUV) lithography, directed self-assembly (DSA), and ArF multiple patterning. For further extension of ArF lithography, one of the key challenges is cost effectiveness. In this paper, a new double patterning method -pattern split process (PSP), which is based on dual tone development is demonstrated. Different from conventional DTD, additional acid and base materials were used in this process to gain high deprotection contrast. By PSP, double pitch frequency pattern which has improved roughness was successfully obtained. Also other basic parameter such as focus margin, wafer uniformity and resolution are reported.

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Development of Carbon Rich Spin-on Sidewall Material

Cited by 2 publications

References 5 publications

The influence of the liquid slab thickness on the planar vapor–liquid interfacial tension

The influence of the liquid slab thickness on the planar vapor–liquid interfacial tension

Development of Materials-based Pitch Split Process

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