Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs

Kang, Myoung-Jin; Kim, Hyun-Seop; Cha, Ho-Young; Seo, Kwang-Seok

doi:10.3390/cryst10090842

Cited by 9 publications

(2 citation statements)

References 38 publications

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“…The electrons injection from the channel to the surface states of the AlGaN/GaN heterostructure degrades the electrical properties of AlGaN/GaN HEMTs, such as the forward drain current (I DS ), leakage current, and breakdown voltage [20,21]. Several surface passivation methods for these surface states using SiO 2 , Si 3 N 4 , Sc 2 O 3 , and benzocyclobutene have been investigated [21][22][23][24][25][26]. The passivation enhances the DC characteristics and reduces the RF dispersion of AlGaN/GaN HEMTs.…”

Section: Introductionmentioning

confidence: 99%

Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates

Pharkphoumy

Janardhanam

Jang³

et al. 2023

Electronics

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Herein, the performance of AlGaN/GaN high-electron-mobility transistor (HEMT) devices fabricated on Si and sapphire substrates is investigated. The drain current of the AlGaN/GaN HEMT fabricated on sapphire and Si substrates improved from 155 and 150 mA/mm to 290 and 232 mA/mm, respectively, at VGS = 0 V after SiO2 passivation. This could be owing to the improvement in the two-dimensional electron gas charge and reduction in electron injection into the surface traps. The SiO2 passivation resulted in the augmentation of breakdown voltage from 245 and 415 V to 400 and 425 V for the AlGaN/GaN HEMTs fabricated on Si and sapphire substrates, respectively, implying the effectiveness of SiO2 passivation. The lower transconductance of the AlGaN/GaN HEMT fabricated on the Si substrate can be ascribed to the higher self-heating effect in Si. The X-ray rocking curve measurements demonstrated that the AlGaN/GaN heterostructures grown on sapphire exhibited a full-width half maximum of 368 arcsec against 703 arcsec for the one grown on Si substrate, implying a better crystalline quality of the AlGaN/GaN heterostructure grown on sapphire. The AlGaN/GaN HEMT fabricated on the sapphire substrate exhibited better performance characteristics than that on the Si substrate, owing to the high crystalline quality and improved surface.

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Section: Introductionmentioning

confidence: 99%

Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates

Pharkphoumy

Janardhanam

Jang³

et al. 2023

Electronics

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show abstract

“…The performance of AlGaN/GaN HEMT technology is limited by charge trapping effects. Consequently, various candidates for passivation has been attempted to neutralize the net surface charge arising from the combination of surface states and the polarized barrier [ 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ]. Most works focus on the performance of the passivated AlGaN/GaN HEMTs at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Lin

2020

Micromachines

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This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation layers are compared. The experimental data show that the addition of a TiO2 passivation layer to undoped AlGaN/GaN HEMT’s increases the value of the third-order intercept point (OIP3) by up to 70% at 2.4 GHz. Furthermore, the minimum noise figure (NFmin) of the HEMT with TiO2 passivation is significantly reduced.

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Effect of Deposition Technique of SiNx Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs

Güler,

Onaylı,

Haliloğlu

et al. 2023

Trans. Electr. Electron. Mater.

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Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs

Cited by 9 publications

References 38 publications

Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates

Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Effect of Deposition Technique of SiNx Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs

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