Development of coherent tunable source in 2–16 μm region using nonlinear frequency mixing processes

Chatterjee, U.

doi:10.1007/s12043-013-0640-2

Cited by 7 publications

(3 citation statements)

References 34 publications

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“…All solid-state laser (SSL) systems have many vital applications because of their light weight and portability. Important examples include infrared (IR) countermeasure systems, spectroscopic systems for standoff detection of drugs and explosives, and medical diagnostic equipment . However, no SSL systems exist in the IR for λ > 3 μm without using a nonlinear optical (NLO) down-conversion technology, for example, difference frequency generation (DFG) .…”

Section: Introductionmentioning

confidence: 99%

Phase Matching, Strong Frequency Doubling, and Outstanding Laser-Induced Damage Threshold in the Biaxial, Quaternary Diamond-like Semiconductor Li₄CdSn₂S₇

et al. 2020

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The novel diamond-like Li4CdSn2S7 possesses many outstanding attributes that enable it to be a new, well-rounded front-runner among infrared (IR) nonlinear-optical materials, especially for high-intensity laser applications. Distortions of the metal–sulfur tetrahedra in accordance with Pauling’s second rule give rise to a significant net dipole moment, resulting in a strong second-order nonlinear optical susceptibility (χ(2)) of 35.0 ± 3.5 pm/V. Li4CdSn2S7 possesses an optical bandgap of 2.59 eV and an exceptional laser-induced damage threshold of >2.5 GW/cm2, which is more than 12.5 times greater than that of AgGaSe2 measured under identical irradiation conditions. Li4CdSn2S7 possesses a melting point of ∼780 °C and phase-matchability. All data indicate that Li4CdSn2S7 will outperform AgGaS2 and AgGaSe2 in difference frequency generation schemes for the generation of mid-IR radiation. New information on the recently reported Li2CdSiS4, which Li4CdSn2S7 also outperforms, is additionally included.

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Section: Introductionmentioning

confidence: 99%

Phase Matching, Strong Frequency Doubling, and Outstanding Laser-Induced Damage Threshold in the Biaxial, Quaternary Diamond-like Semiconductor Li₄CdSn₂S₇

et al. 2020

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“…It has a unique set of optical and nonlinear optical properties, such as wide transmission range (0.7-12 μm), large nonlinear coefficient (d 36 = 75 pm=V), high thermal conductivity (360 mW • cm −1 • K −1 ), an applicable laser-induced damage threshold (30 GW=cm 2 ), and suitable birefringence (0.040-0.042) [4][5][6] . As an essential laser frequency conversion crystal, ZGP can be widely used for the generation of infrared optical parametric oscillation (OPO), optical parametric amplifier (OPA), frequency mixing (FM), and second-harmonic generation (SHG) [7][8][9][10] . Pumped at 2 μm, the ZGP OPO can realize continuously tunable laser output in the range of 3-8 μm with a conversion efficiency of more than 50% [11] .…”

Section: Introductionmentioning

confidence: 99%

Atomic structures and carrier dynamics of defects in a ZnGeP2 crystal

et al. 2023

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ZnGeP 2 (ZGP) crystals have attracted tremendous attention for their applications as frequency conversion devices. Nevertheless, the existence of native point defects, including at the surface and in the bulk, lowers their laser-induced damage threshold by increasing their absorption and forming starting points of the damage, limiting their applications. Here, native point defects in a ZGP crystal are fully studied by the combination of high angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and optical measurements. The atomic structures of the native point defects of the Zn vacancy, P vacancy, and Ge-Zn antisite were directly obtained through an HAADF-STEM, and proved by photoluminescence (PL) spectra at 77 K. The carrier dynamics of these defects are further studied by ultrafast pump-probe spectroscopy, and the decay lifetimes of 180.49, 346.73, and 322.82 ps are attributed to the donor V p + → valence band maximum (VBM) recombination, donor Ge Zn + → VBM recombination, and donor-acceptor pair recombination of V p + → V Zn − , respectively, which further confirms the assignment of the electron transitions. The diagrams for the energy bands and excited electron dynamics are established based on these ultrahigh spatial and temporal results. Our work is helpful for understanding the interaction mechanism between a ZGP crystal and ultrafast laser, doing good to the ZGP crystal growth and device fabrication.

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“…In addition, the search for new and more appropriate crystals continues to be an area of interest [7,8]. To this end, ZnGeP 2 in particular has gained importance as it possesses large nonlinearity, a relatively high damage threshold and a large angular and temperature tolerance with respect to phase matching conditions [3,9,10]. However, owing to a strong absorption feature in the 10 µm region overlapping with the 10 P band, usage of ZnGeP 2 has been generally restricted to second harmonic generation (SHG) of CO 2 laser emissions in the 9 µm region [11].…”

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confidence: 99%

Second harmonic conversion of 10 µm emissions of pulsed and CW CO₂lasers in ZnGeP₂

et al. 2014

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The paper reports on the satisfactory performance of a ZnGeP 2 crystal towards second harmonic conversion of a pump beam at 10 μm wavelength and thus establishes its utility in the generation of coherent radiation not only around 4.5 μm but also in the neighbourhood of the 5 μm region of mid-infrared. Experimental results comparing performance of a thin crystal when pumped alternately with the emissions of continuous wave (CW) and TEA CO 2 lasers are presented. The performance was also studied as a function of the duration of the pump TEA CO 2 laser pulse and the observed anomaly is qualitatively explained. The significant increase in conversion efficiency in the case of pulsed operation is attributed to the much higher irradiating intensity to which the crystal is subjected to in comparison with the CW case. Of particular interest is the finding that the pump intensity below which the second harmonic generation process ceases is lower by almost 3 orders of magnitude in case of the CW operation.

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Development of coherent tunable source in 2–16 μm region using nonlinear frequency mixing processes

Cited by 7 publications

References 34 publications

Phase Matching, Strong Frequency Doubling, and Outstanding Laser-Induced Damage Threshold in the Biaxial, Quaternary Diamond-like Semiconductor Li₄CdSn₂S₇

Phase Matching, Strong Frequency Doubling, and Outstanding Laser-Induced Damage Threshold in the Biaxial, Quaternary Diamond-like Semiconductor Li₄CdSn₂S₇

Atomic structures and carrier dynamics of defects in a ZnGeP2 crystal

Second harmonic conversion of 10 µm emissions of pulsed and CW CO₂lasers in ZnGeP₂

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Development of coherent tunable source in 2–16 μm region using nonlinear frequency mixing processes

Cited by 7 publications

References 34 publications

Phase Matching, Strong Frequency Doubling, and Outstanding Laser-Induced Damage Threshold in the Biaxial, Quaternary Diamond-like Semiconductor Li4CdSn2S7

Phase Matching, Strong Frequency Doubling, and Outstanding Laser-Induced Damage Threshold in the Biaxial, Quaternary Diamond-like Semiconductor Li4CdSn2S7

Atomic structures and carrier dynamics of defects in a ZnGeP2 crystal

Second harmonic conversion of 10 µm emissions of pulsed and CW CO2lasers in ZnGeP2

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Product

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Phase Matching, Strong Frequency Doubling, and Outstanding Laser-Induced Damage Threshold in the Biaxial, Quaternary Diamond-like Semiconductor Li₄CdSn₂S₇

Phase Matching, Strong Frequency Doubling, and Outstanding Laser-Induced Damage Threshold in the Biaxial, Quaternary Diamond-like Semiconductor Li₄CdSn₂S₇

Second harmonic conversion of 10 µm emissions of pulsed and CW CO₂lasers in ZnGeP₂