2020
DOI: 10.1109/jsen.2019.2948129
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Development of Doped Silicon Multi-Element Stress Sensor Rosette With Temperature Compensation

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Cited by 7 publications
(9 citation statements)
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“…(i) Sensors responding linearly to a single measurand, such as diode-based temperature sensors with output proportional to absolute temperature [4], [73], [74]. (ii) Sensors with linear response experiencing temperature cross-sensitivity, such as diffused piezoresistive stress sensors [75], force/moment sensors based on piezoresistive field-effect transistors [76], [77], and pressure sensors [78], [79]. A pressure sensor case was already successfully analyzed in this spirit [8].…”
Section: A Comments On the Present Gaussian Approachmentioning
confidence: 99%
“…(i) Sensors responding linearly to a single measurand, such as diode-based temperature sensors with output proportional to absolute temperature [4], [73], [74]. (ii) Sensors with linear response experiencing temperature cross-sensitivity, such as diffused piezoresistive stress sensors [75], force/moment sensors based on piezoresistive field-effect transistors [76], [77], and pressure sensors [78], [79]. A pressure sensor case was already successfully analyzed in this spirit [8].…”
Section: A Comments On the Present Gaussian Approachmentioning
confidence: 99%
“…There is no fundamental restriction regarding the set of basis functions ϕ(x). Sensor types that may benefit from Bayesian sensor calibration in the present form include ion-selective chemical sensors [90], [91], inertial sensors [22], [23], [92], and mechanical sensors [5], [8], [10], [17], [18], [93]. By using the method of multivariate Bayesian regression and inference [77], [88], we expect the method to be generalizable to multisensor systems designed to provide values of more than a single measurand.…”
Section: Discussionmentioning
confidence: 99%
“…For this purpose, we define V = (v − (V S , V T ), v + (V S , V T )). Thereupon, σ 1 (v, V ) is obtained using ( 8) and (10). This then serves to evaluate f G (V ) and f I (V ) (cf.…”
Section: Calibration At Near-optimal Stress-temperature Conditionsmentioning
confidence: 99%
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“…To reduce the temperature effect on the accuracy of PR sensors readout, different techniques were developed utilizing software schemes [23][24][25], new designs [26,27], and fabrication processes [28,29] for PR stress sensor. For doped silicon-based PR 3D stress sensors, all the developed temperature compensation techniques, to the authors' knowledge, are only to compensate for the thermal effect on the resistance [7,11,30]. This is considered partial temperature compensation since the temperature has an impact on the sensitivity (i.e.…”
Section: Introductionmentioning
confidence: 99%