Development of epitaxial silicon lattice-matched insulators: silicon heterostructures for quantum confinement

Kirk, W. P.; Clark, Kenneth E.; Maldonado, Eduardo; Basit, Nasir; Bate, R. T.; Spencer, Gregory

doi:10.1006/spmi.2000.0937

Cited by 4 publications

(5 citation statements)

References 18 publications

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“…The direct bandgap is 3.59 eV and the spin splitting is 0.67 eV. Previous electrical measurements 12,13 indicate a conduction band offset of at most 1.2 eV for the Si/BeSe 0.41 Te 0.59 heterostructure. As we will see in the following subsections there are interface subbands induced at the heterostructure interfaces.…”

Section: Introductionmentioning

confidence: 76%

“…27 These problems can be overcome by vicinal growth and passivated surfaces. 12,13 In this way one can minimize the interface charging effects. Moreover, self-consistent ab-initio calculations show that the electric fields due to difference in ionicity between the two semiconductor constituents of a superlattice dominate the total electric field.…”

Section: B a Single Quantum Wellmentioning

confidence: 99%

“…Vegard's law indicates that the lattice matched composition with Si is BeSe 0.41 Te 0.59 . Thus recent developments 12,13 in the growth of silicon lattice-matched BeSe 0.41 Te 0.59 open the opportunity for a new class of Si based devices.…”

Section: Introductionmentioning

confidence: 99%

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Electronic and optical properties of beryllium chalcogenide/silicon heterostructures

Sandu

Kirk

2006

Phys. Rev. B

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We have calculated electronic and optical properties of Si/BeSe 0.41 Te 0.59 heterostructures by a semiempirical sp 3 s * tight-binding method. Tight-binding parameters and band bowing of BeSe 0.41 Te 0.59 are considered through a recent model for highly mismatched semiconductor alloys. The band bowing and the measurements of conduction band offset lead to a type II heterostucture for Si/BeSe 0.41 Te 0.59 with conduction band minimum in the Si layer and valence band maximum in the BeSe 0.41 Te 0.59 layer. The electronic structure and optical properties of various (Si 2 ) n /(BeSe 0.41 Te 0.59 ) m [001] superlattices have been considered. Two bands of interface states were found within the bandgap of bulk Si. Our calculations indicate that the optical edges are below the fundamental bandgap of bulk Si and the transitions are optically allowed.

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Section: Introductionmentioning

confidence: 76%

Section: B a Single Quantum Wellmentioning

confidence: 99%

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Electronic and optical properties of beryllium chalcogenide/silicon heterostructures

Sandu

Kirk

2006

Phys. Rev. B

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“…The flow temperature of borosilicate glass is much lower (200-300°C) than pure vitreous oxide and, therefore, should yield better results. 22,23 Groups in Germany, France, and Japan have also recently pursued growth of beryllium chalcogenides on other compound semiconductor substrates of varied interest. 7.…”

Section: Vertically Integrated Hybrid Technologymentioning

confidence: 99%

HgCdTe on Si: Present status and novel buffer layer concepts

Golding

Holland

Kim

et al. 2003

Journal of Elec Materi

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We discuss buffer-layer concepts for the synthesis of low defect-density HgCdTe epilayers on Si for both hybrid and monolithically integrated, infrared focalplane arrays (IRFPAa). The primary technical problems to overcome include the 19% lattice-parameter mismatch between HgCdTe and Si, and the (211)B surface orientation required for molecular-beam epitaxy (MBE), the growth technique of choice for HgCdTe. We provide a general overview of IRFPAs, motivations for realizing HgCdTe on Si, the current state-of-the-art parameters as a baseline, and three novel buffer-layer concepts and technologies based on (1) obedient GeSi films on SiO 2 , (2) wafer bonding, and (3) chalcogenides.

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“…In recent years there has been a tremendous interest in electro-optical properties of II-VI semiconductors in particular epitaxial II-VI heterostructures. New developments 1,2 in the growth of Si lattice-matched BeSe 0.41 Te 0.59 open the opportunity to a new class of Si based devices. Be-chalcogenides are wide-band gap zinc blende semiconductors with lattice constants close to that of Si.…”

Section: Introductionmentioning

confidence: 99%

Generalized band anticrossing model for highly mismatched semiconductors applied toBeSexTe1−x

Sandu

Kirk

2005

Phys. Rev. B

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Development of epitaxial silicon lattice-matched insulators: silicon heterostructures for quantum confinement

Cited by 4 publications

References 18 publications

Electronic and optical properties of beryllium chalcogenide/silicon heterostructures

Electronic and optical properties of beryllium chalcogenide/silicon heterostructures

HgCdTe on Si: Present status and novel buffer layer concepts

Generalized band anticrossing model for highly mismatched semiconductors applied toBeSexTe1−x

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