Development of ferroelectric Pb(ZrxTi1−x)O3thin films by metallo-organic decomposition process and rapid thermal annealing

Shi, Lijuan; Krupanidhi, S. B.; Haertling, Gene H.

doi:10.1080/10584589208215569

Cited by 32 publications

(7 citation statements)

References 23 publications

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“…and ferroelectric properties. We have found, along with other authors [ 19,20], that films crystallized with rapid heating have a better ferroelectric response than films treated in an oven with slow heating rates. Ra-…”

Section: Water Adsorptionmentioning

confidence: 74%

Chemically derived ferroelectric calcium modified lead titanate thin films deposited from aquo-diol-solvent solutions

Calzada

Sirera

1996

J Mater Sci: Mater Electron

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A chemical process for the preparation of modified lead titanate precursor solutions from diols and water as solvents, is described in detail in this paper. These solutions are used for the deposition of amorphous films. Thermal treatment of these films promotes crystallization of a perovskite phase. Tetragonality of the perovskite, crystallinity and microstructure of the ferroelectric films are related to the chemistry of the solutions.

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Section: Water Adsorptionmentioning

confidence: 74%

Chemically derived ferroelectric calcium modified lead titanate thin films deposited from aquo-diol-solvent solutions

Calzada

Sirera

1996

J Mater Sci: Mater Electron

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“…The decrease of the resistivity cannot be explained by the oxygen contamination ͓determined by 16 O(d,p) 17 O* nuclear reaction͔ which is less than 1 at % whatever the deposition parameters, but by the microstructure of the films. A sharp increase of resistivity occurs when the deposition pressure increases, while it decreases when the temperature increases ͑Fig.…”

Section: A Properties Of Pt Electrodesmentioning

confidence: 89%

“…6curve ͑a͔͒ and 20°C/s ͓Fig. 16 This difference can be attributed to the slow rise rate of the oven annealing compared to the fast rise ramp of the RTP process. 6-curve ͑c͔͒.…”

Section: Structure Composition and Chemical State Of Postannealed Pmentioning

confidence: 99%

Growth and characterization of radio-frequency magnetron sputtered lead zirconate titanate thin films deposited on 〈111〉 Pt electrodes*

Ea-Kim

Aubert

Ayguavives

et al. 1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Growth of ferroelectric bismuth lanthanum nickel titanate thin films by rf magnetron sputteringElectrical and optical properties of lanthanum-modified lead zirconate titanate thin films by radio-frequency magnetron sputtering Preparation and properties of lead-zirconate-titanate ferroelectric thin films using radio frequency planar magnetron sputteringThe physical, chemical, and electrical quality of the bottom electrode plays a key role in the fabrication of ferroelectric capacitors. In this article, we have used x-ray diffraction and transmission electron microscopy to study the stability of the Pt/TiN/Ti/SiO 2 /Si stack before PZT film investigations. The Pt layer deposited by radio-frequency ͑rf͒ magnetron sputtering on such structure was strongly ͗111͘ oriented. The nucleation, growth, and orientation of lead zirconate titanate ͓Pb͑Zr 0.40 Ti 0.60 ͒O 3 ͔ thin film, performed by rf magnetron sputtering from ceramic target on ͗111͘ oriented platinum electrode and crystallized by rapid thermal annealing, have been investigated. The studies reveal that the PZT thin films deposited at 200°C, with a substrate-target distance equal to 5.5 cm, using 1 Pa Ar pressure, and plasma power density of 1.7 W/cm 2 allow good control of the film composition. The optimal annealing conditions have been then determined to achieve a pure perovskite structure ͑mainly ͗111͘ oriented͒. Ferroelectric hysteresis loop measurements indicated a remanent polarization of 22.0 C/cm 2 and coercive field of 50 kV/cm for the phase composition Zr/Tiϭ40/60.

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“…Different kinds of annealing treatment have been developed but each method had some limitations. 3,4 In particular, two steps for synthesis ferroelectric films were necessary and the films were generally polycrystalline ͑oriented or not͒ but not monocrystalline. In situ growth of films with the perovskite crystal structure is desirable in order to suppress a technological step and to obtain epitaxial films.…”

Section: ͓S0021-8979͑96͒05902-8͔mentioning

confidence: 99%

Substrate temperature and target composition effects on PbTiO3 thin films produced in situ by sputtering

Jaber¹,

Rémiens²,

Thierry³

1996

Journal of Applied Physics

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The growth kinetics of PbTiO3 thin films, deposited by radio-frequency magnetron sputtering, have been studied as a function of the substrate temperature and the lead oxide content in the target. An equilibrium zone exists where the composition of the films corresponds to stoichiometric PbTiO3, independent of the lead oxide target composition. This zone appears at relatively low temperature when the film contains little excess of lead. This behavior can be explained by a mechanism involving the competition between the reevaporation of PbO from the film during the growth and the formation of PbTiO3 by the reaction of PbO with TiO2. Under optimal growth conditions we have obtained in situ PbTiO3 thin films at 550 °C.

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Development of ferroelectric Pb(Zr_xTi_1−x)O₃thin films by metallo-organic decomposition process and rapid thermal annealing

Cited by 32 publications

References 23 publications

Chemically derived ferroelectric calcium modified lead titanate thin films deposited from aquo-diol-solvent solutions

Chemically derived ferroelectric calcium modified lead titanate thin films deposited from aquo-diol-solvent solutions

Growth and characterization of radio-frequency magnetron sputtered lead zirconate titanate thin films deposited on 〈111〉 Pt electrodes*

Substrate temperature and target composition effects on PbTiO3 thin films produced in situ by sputtering

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