2017
DOI: 10.1002/pssc.201700057
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Development of fountain detectors for spectroscopy of secondary electron in SEM

Abstract: To image the variation of surface potential in semiconductors, energy selective secondary electron detector, named fountain detector (FD), was developed. Two types of grids, planar and spherical, were designed and the superiority of latter was demonstrated. The p–n junction of 4H‐SiC was observed using spherical FD and the image was much clear than that using conventional detector.

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Cited by 3 publications
(4 citation statements)
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“…An offset exists in the average gray level at −V dc = 0 V. This implies that SE3s are still detected. However, as −V dc increases to 1 V, the gray level decreases to less than that at −V dc = 0 V. This is reasonable because SE3s from the grids are detected when the −V f is mainly in the negative region and its signals are maximized at −V f = −0.5 V as indicated by Agemura et al 29) In this study, even when −V dc = 0 V, V pp has to be applied to detect signal changes as long as the lock-in amplifier is used, and the voltage range (= V f ) is from −0.5 to 0.5 V at −V dc = 0 V. In this range, the number of SE3s shows its maximum signal change such that the lock-in amplifier can feed output signals by synchronizing with reference signals at a frequency of 1 kHz. On the other hand, the number of SE3s at −V dc > 0 V is nearly constant; 29) thus, the lock-in amplifier output very few signals depending on the number of SE3s, indicating that the output signals are those of only SEs.…”
Section: Resultssupporting
confidence: 54%
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“…An offset exists in the average gray level at −V dc = 0 V. This implies that SE3s are still detected. However, as −V dc increases to 1 V, the gray level decreases to less than that at −V dc = 0 V. This is reasonable because SE3s from the grids are detected when the −V f is mainly in the negative region and its signals are maximized at −V f = −0.5 V as indicated by Agemura et al 29) In this study, even when −V dc = 0 V, V pp has to be applied to detect signal changes as long as the lock-in amplifier is used, and the voltage range (= V f ) is from −0.5 to 0.5 V at −V dc = 0 V. In this range, the number of SE3s shows its maximum signal change such that the lock-in amplifier can feed output signals by synchronizing with reference signals at a frequency of 1 kHz. On the other hand, the number of SE3s at −V dc > 0 V is nearly constant; 29) thus, the lock-in amplifier output very few signals depending on the number of SE3s, indicating that the output signals are those of only SEs.…”
Section: Resultssupporting
confidence: 54%
“…The contrast between the p-SiC (Point 14 or 16) and n-SiC (Point 20) regions is reversed within the range from −1.25 to −2.75 V, which is different from the general observation that the contrast of the p-region is brighter than that of the n-region. [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27]29) In order to confirm these new findings, Auger spectra were obtained. Figure 8 shows the Auger spectra taken from typical points indicated by yellow numbers in Fig.…”
Section: Resultsmentioning
confidence: 77%
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