Development of Full-Color Display Combined with Ultraviolet-Electroluminescence/Photoluminescence  Multilayered Thin Films

Senda, Takahiro; Cho, Young-Jae; Hirakawa, Takashi; Okamoto, H.; Takakura, Hideyuki; Hamakawa, Yoshihiro

doi:10.1143/jjap.39.4716

Cited by 16 publications

(11 citation statements)

References 4 publications

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“…Furthermore, with proper in situ doping during epitaxial growth and device design, it may be possible to form electroluminescence III-V emitters for specific UV optoelectronic applications such as white lighting. 29 In addition, these experiments provide evidence that integration of ferromagnetic behavior and UV emission can achieved in the same Gd-doped AlN thin film.…”

Section: -mentioning

confidence: 67%

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Zavada

Nepal

Lin

et al. 2006

Applied Physics Letters

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Deep ultraviolet emission from gadolinium ͑Gd͒-implanted AlN thin films has been observed using photoluminescence ͑PL͒ spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of ϳ6 ϫ 10 14 cm −2 . Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.

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Section: -mentioning

confidence: 67%

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Zavada

Nepal

Lin

et al. 2006

Applied Physics Letters

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“…In this letter, we demonstrate a silicon-based efficient UV light emitter based on a SiO 2 :Gd MOS structure delivering a sharp emission peak at 316 nm from Gd 3+ ions, which is comparable to the efficient UV emission of ZnF 2 : Gd. 7 External quantum efficiencies above 1% are achieved with not fully optimized devices. Device sizes below 1 m can be easily achieved with standard complementary MOS (CMOS) technology.…”

mentioning

confidence: 99%

“…However, smaller sizes below 1 m are possible for high-resolution display or biochip applications. Combination with red-green-blue phosphors, efficient silicon-based UV light emitters can be better candidates for the fabrication of high-resolution full-color microdisplays as compared to ZnF 2 : Gd thin-film EL devices, 7 since the fabrication of silicon-based devices is fully compatible with standard MOS technology.…”

mentioning

confidence: 99%

Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device

Sun

Skorupa

Dekorsy

et al. 2004

Applied Physics Letters

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Strong ultraviolet electroluminescence with an external quantum efficiency above 1% is observed from an indium-tin oxide/SiO 2 : Gd/ Si metal-oxide-semiconductor structure. The SiO 2 : Gd active layer is prepared by thermal oxidation followed by Gd + implantation and annealing. The electroluminescence spectra show a sharp peak at 316 nm from the 6 P 7/2 to 8 S 7/2 transition of Gd Light sources operating in the ultraviolet (UV) region are required for a number of applications, including solidstate lighting, biological agent detection, sterilization, and covert communication. Strong UV light emission from AlGaN-based emitters has been reported emitting in the UV range from 265 to 325 nm.1-3 However, for the development of microlight sources for on-chip analysis, such as biochips, biosensors, microflorescent displays, etc., efficient siliconbased microlight sources are required which can be integrated into silicon integrated circuits. Silicon-based UV light emitters are promising for such applications. Recently, light emitters incorporating rare-earth Er 3+ -, Tm 3+ -, Tb 3+ -, and Ce 3+ -doped Si-rich SiO 2 have been reported with emission in the infrared to blue-green spectral regions.4,5 Strong blueviolet emission at 390 nm has been reported in Ge 3+ -implanted SiO 2 metal-oxide-semiconductor (MOS) structures.6 Efficient silicon-based UV light emitters at a shorter wavelength from silicon device have not yet been reported for the time being. In this letter, we demonstrate a silicon-based efficient UV light emitter based on a SiO 2 :Gd MOS structure delivering a sharp emission peak at 316 nm from Gd 3+ ions, which is comparable to the efficient UV emission of ZnF 2 : Gd.7 External quantum efficiencies above 1% are achieved with not fully optimized devices. Device sizes below 1 m can be easily achieved with standard complementary MOS (CMOS) technology.Electroluminescent (EL) devices are prepared by standard silicon CMOS technology on 4 in. n-type silicon wafer with resistivity of 2 -5 ⍀ cm. The structure consists of an active gate oxide area surrounded by a field oxide (1 m thick). The active layer is a 100 nm thick thermally grown SiO 2 layer implanted with Gd + ions at two energies of 50 and 110 keV with doses of 5 ϫ 10 14 and 1 ϫ 10 15 cm −2 , respectively. After annealing at 800°C for 1 h, a plasma treatment was performed in a mixture of oxygen/hydrogen (90/ 10) for 5 min. The gate electrode consists of a 100 nm thick indiumtin oxide (ITO) deposited by rf sputtering. Various shapes of MOS structures with different feature sizes in the range of 1 to 500 m were fabricated for testing the function of the EL devices dependent upon the geometry.EL spectra were measured on a MOS structure with 500 m diameter with a constant current supplied by a sourcemeter (Keithley 2410). EL signals were recorded at room temperature with a monochromator and a photomultiplier. The absolute EL power from the device was measured using a calibrated optical power meter. The external EL power efficiency is calculated by integrating the...

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“…Other possibilities are either formation of secondary phase like ZnF 2 by some excess fluorine atoms or segregation of fluorine atoms at the grain boundaries. ZnF 2 is known as a wide band-gap insulator [24]. Although no report has been made on the band-gap energy of ZnF 2 , the optical band-gap of ZnF 2 is thought to be near or higher than 5 eV judging from the transmission data of evaporated ZnF 2 film [13].…”

Section: Discussionmentioning

confidence: 99%

Effect of fluorine doping on the properties of ZnO films deposited by radio frequency magnetron sputtering

Ku¹,

Kim

Lee

et al. 2008

J Electroceram

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ZnO films with varying fluorine content were prepared on Corning glass by radio frequency magnetron sputtering of ZnO target containing ZnF 2 at room temperature, and the compositional, electrical, optical, and structural properties of the as-grown films together with the vacuum-annealed films were investigated. The fluorine content in the fluorine doped ZnO (FZO) films increased almost linearly with increasing ZnF 2 content in sputter target, and the highest atomic concentration was 7.3%. Vacuum-annealing caused a slight reduction of fluorine content in the films. The resistivity of the as-grown FZO films deposited showed a typical valley-like behavior with respect to the fluorine content in film, i.e. having minimum resistivity at intermediate fluorine content. Despite high fluorine content in the FZO films, the carrier concentration remained below 1.2×10 20 cm −3 , leading to very low doping efficiency level. Upon vacuum-annealing, the resistivity of FZO films decreased substantially due to increase in both the carrier concentration and the Hall mobility. From the structural analysis made by X-ray diffraction study, it was shown that addition of small amount of fluorine enhanced the crystallinity of FZO films with (002) preferred orientation, and that large amount of fluorine addition yielded disruption of preferred orientation. It was also shown that doping of fluorine rendered a beneficial effect in reducing the absorption loss of ZnO films in visible range, thereby substantially enhancing the figure of merit.

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Development of Full-Color Display Combined with Ultraviolet-Electroluminescence/Photoluminescence Multilayered Thin Films

Cited by 16 publications

References 4 publications

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device

Effect of fluorine doping on the properties of ZnO films deposited by radio frequency magnetron sputtering

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