Development of Group III–V Colloidal Quantum Dots for Optoelectronic Applications

Kim, Tae‐Wan; Shin, Daekwon; Kim, Meeree; Kim, Hyoin; Cho, Eunhye; Choi, Mahnmin; Kim, Jugyeong; Jang, Eunji; Jeong, Sohee

doi:10.1021/acsenergylett.2c02489

Cited by 32 publications

(29 citation statements)

References 86 publications

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“…IIIÀV semiconductor nanocrystal (NCs) are promising materials for next-generation for applications in optoelectronic devices including light-emitting diodes, photodetectors, solar cells, and image sensors. 1,2 Indium phosphide (InP) NCs are classified as the III-V semiconductor NC, which has an advantage in an eco-friendly material not including toxic metal (Cd, Pb, etc.) with a bulk band gap of 1.35 eV.…”

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Synthesis of single‐crystalline InP tetrapod nanocrystals via addition of ZnCl₂

Kim

Park

Kim

et al. 2023

Bulletin Korean Chem Soc

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Recently, single-crystalline indium phosphide (InP) tetrapods, which allow an exciton to act in a true tetrapodal geometry, were successfully synthesized and proved as a useful platform to study multiple exciton behaviors. We used ZnCl 2 precursor, a commonly used additive in the synthesis of aminophosphinebased InP nanocrystals to enhance the optical performance, and successfully synthesized InP tetrapods (InP-ZnCl 2 ) with the narrower arm length distribution. Interestingly, no distinct enhancement in photoluminescence was observed while the arm length of the InP tetrapod was suppressed with the addition of ZnCl 2 . Further shell growth on InP-ZnCl 2 successfully preserved tetrapodal geometry in InP-ZnCl 2 /ZnSe and showed higher photoluminescence than that of tetrapodal InP/ZnSe. The crystal structure of InP-ZnCl 2 was also retained even along with various Zn feed ratios as observed in x-ray diffraction (XRD) patterns and showed no peak shift as Zn only passivates the surface of InP tetrapods. These results provide a platform to study the role of Zn precursor.

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confidence: 99%

Synthesis of single‐crystalline InP tetrapod nanocrystals via addition of ZnCl₂

Kim

Park

Kim

et al. 2023

Bulletin Korean Chem Soc

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“…However, despite the excellent properties found in bulk III−V semiconductors, they do not readily appear in colloidal NCs, mainly due to difficulties in controlling their synthesis and surface properties. 52 (1) One challenge in growing III−V NCs is the higher temperature required compared to II−VI or IV−VI materials and the limited availability of suitable precursors. Highly reactive precursors, which narrow the process window for NC synthesis, are common.…”

Section: Achieving Well-defined Facets In Iii−v Ncsmentioning

confidence: 99%

Semiconductor Nanocrystals: Unveiling the Chemistry behind Different Facets

Kim

Choi

et al. 2023

Acc. Chem. Res.

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Conspectus Developing next-generation colloidal semiconductor nanocrystals with high-quality optoelectronic properties and precise processability relies on achieving complete mastery over the surface characteristics of nanocrystals (NCs). This requires precise engineering of the ligand–NC surface interactions, which poses a challenge due to the complex reactivity of the multiple binding sites across the entire surface. Accordingly, recent progress has been made by strategically combining well-defined surface models with quantitative surface reactions to advance our understanding and manipulation of NC surface chemistry. Our lab has contributed to this progress by developing a size-dependent shape model of IV–VI NCs, gaining insights into their unique facet-specific chemistry, and developing a systematic ligand modification strategy for target applications. Furthermore, we have created well-defined facets in III–V NCs via a co-passivation strategy, addressing the previously lacking specific shapes. This Account is divided into three parts. First, we discuss the complexities involved in comprehensively understanding the nanocrystal surface structure at the atomistic level. We explain why we focused on well-defined NCs with a large exciton Bohr radius to explore facets, an essential aspect of surface heterogeneity across the entire NC. Second, we present our work on one of the most studied nanocrystals, IV–VI materials, and how facet-specific surface chemistry has led to a meaningful understanding and control of the NC’s surface. We discovered a size-dependent facet distribution in IV–VI NCs and suggested facet-specific surface chemistry to improve the photophysical properties of NCs. We further modulate the electronic properties of NC assemblies for efficient optoelectronic applications. Third, we describe our recent success in achieving well-defined facets and their facet-specific chemistry in III–V NCs, which have yet to be explored as much as classical II–VI or IV–VI materials. We explain how controlling the surfaces in III–V NCs has been challenging. We present a precise growth platform for the geometric modulation of NCs, which can be further explored for shape-dependent exciton behavior and surface reactivities. Taken together, we present a compelling case for utilizing facet-specific chemistry as a platform for mechanistic investigation and morphology exploration, which can pave the way for developing high-quality and precisely designed NCs for optoelectronic technologies, unlocking new multidisciplinary applications.

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“…This is attributed to the highly reactive and strongly coordinated precursors normally used (Section 2.2), in addition to the covalent nature of the resultant III-V QDs. 56,[81][82][83] For instance, when synthesising InP, it is widely accepted the P(SiR 3 ) 3 precursor is all but depleted in the nucleation phase. Consequently, the growth stage is driven by an Ostwald ripening process.…”

Section: Single-source Precursorsmentioning

confidence: 99%