IEEE Conference on Photovoltaic Specialists
DOI: 10.1109/pvsc.1990.111613
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Development of high-performance GaInAsP solar cells for tandem solar cell applications

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Cited by 16 publications
(5 citation statements)
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“…4) Further improvement of the efficiency is expected by utilizing the GaInAsP bottom cell, which has an optimum E g of about 0.95 eV as the bottom cell for the GaAs-based top cell under 1-sun air-mass 1.5 global (AM1.5G) conditions. 5) However, the performance of the GaInAsP bottom cell that we had previously fabricated was inferior to that of the GaInAs bottom cell. 4) Moreover, the highest efficiency of the GaInAsP (E g ¼ 0:95 eV) single-junction cell under 1-sun AM1.5G conditions is 11.2% to our best knowledge, 5) although a theoretical limit efficiency is about 23%.…”
mentioning
confidence: 91%
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“…4) Further improvement of the efficiency is expected by utilizing the GaInAsP bottom cell, which has an optimum E g of about 0.95 eV as the bottom cell for the GaAs-based top cell under 1-sun air-mass 1.5 global (AM1.5G) conditions. 5) However, the performance of the GaInAsP bottom cell that we had previously fabricated was inferior to that of the GaInAs bottom cell. 4) Moreover, the highest efficiency of the GaInAsP (E g ¼ 0:95 eV) single-junction cell under 1-sun AM1.5G conditions is 11.2% to our best knowledge, 5) although a theoretical limit efficiency is about 23%.…”
mentioning
confidence: 91%
“…5) However, the performance of the GaInAsP bottom cell that we had previously fabricated was inferior to that of the GaInAs bottom cell. 4) Moreover, the highest efficiency of the GaInAsP (E g ¼ 0:95 eV) single-junction cell under 1-sun AM1.5G conditions is 11.2% to our best knowledge, 5) although a theoretical limit efficiency is about 23%. 6) A high-quality GaInAsP cell with E g of 0.95 eV has not yet been obtained.…”
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confidence: 91%
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“…3 The 9.4% result is the highest reported efficiency of any solar cell under the GaAs-filtered direct spectrum. GaInAs cells at 0.74 eV have been developed for operation either directly under a GaAs filter or under an InP filter, 3,8 and lower bandgap lattice-mismatched GaInAs cells have been developed for thermophotovoltaic applications. 9 A GaInAsP/GaInAs tandem solar cell for operation under GaAs has never been reported.…”
Section: Introductionmentioning
confidence: 99%
“…Initial research on the device was devoted to the development of three-terminal tandem cells for the purpose of studying the top (InP) and bottom (Ga,,In,,,As) subcells independently, and to circumvent the problem of electrically interconnecting the subcells within the the monolithic structure. Using the three-terminal approach, the tandem cell performance progressed rapidly (2)(3)(4)(5)(6). ,and improvements in the epitaxial growth and device processing procedures eventually led to a terrestrial concentrator tandem cell efficiency of 31.8% (4,6), which is the highest value yet attained for a monolithic solar cell.…”
Section: Introductionmentioning
confidence: 99%