2006
DOI: 10.1149/1.2355879
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Development of High-Throughput Batch-Type Epitaxial Reactor

Abstract: Si/SiGe selective epitaxial growth is becoming a critical process step for ULSI fabrication on 65nm and beyond technologies with need for elevated source-drain or strained Si channel to enhance device performance. This paper reviews recent efforts to improve batch-type epitaxial reactors for high-volume device fabrication and shows recent progress in low-temperature Si/SiGe selective epi process.

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