Development of high-vacuum planar magnetron sputtering using an advanced magnetic field geometry

Abstract

A permanent magnet in a new magnetic field geometry (namely, with the magnetization in the radial direction) was fabricated and used for high-vacuum planar magnetron sputtering using Penning discharge. Because of the development of this magnet, the discharge current and deposition rate were increased two to three times in comparison with the values attainable with a magnet in the conventional geometry. This improvement was because the available space for effective discharge of the energetic electrons for the ionization increased because the magnetic field distribution increased in both the axial and radial directions of discharge.

Fabrication of carbon nanomaterials using supercritical states of ethanol and binary system of ethanol and carbon dioxide for LSI interconnects

“…The thicknesses of the Co or Fe catalyst and Al 2 O 3 film laminated on the Si wafer surfaces, which are enclosed in parentheses, were estimated from their deposition rates. The Co or Fe catalyst was deposited by high-vacuum magnetron sputtering, 11,12) whereas the Al 2 O 3 film was formed by RF sputtering. The above substrates and their preparation methods are summarized in Fig.…”