Development of high-κ HoTiO3 sensing membrane for pH detection and glucose biosensing

Pan, Tung-Ming; Huang, Ming-De; Lin, Chao-Wen; Wu, Min‐Hsien

doi:10.1016/j.snb.2009.10.049

Cited by 66 publications

(32 citation statements)

References 39 publications

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“…While the hysteresis is reduced (2.3 mV) for the device with the surface textured with 70 nm silica particles, the minimum drift (0.7 mV) is observed for the case of large particles (diameter∼135 nm). The hysteresis and drift voltages data are comparable to those reported in the literature 7,8,13 for EIS devices. For example, while investigating the sensing performance of high-k Sm 2 O 3 by annealing at different temperatures, Wu et al 7 observed hysteresis and drift voltages in the range 6.2 − 21.8 mV and 1.29 -18.14 mV/h, respectively.…”

Section: Resultssupporting

confidence: 87%

Sensitivity Enhancement Mechanisms in Textured Dielectric based Electrolyte-Insulator-Semiconductor (EIS) Sensors

Kumar

Panda

2015

ECS J. Solid State Sci. Technol.

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The possible mechanisms governing the enhancement of sensitivities of Electrolyte-insulator-semiconductor (EIS) devices upon surface modification (texturing) realized by electrostatic attachment of silica particles using 3-aminopropyl triethoxysilane (APTES) as a linker are presented. EIS devices were fabricated with a textured dielectric surface using SiO 2 particles (of diameters 475, 135, and 70 nm) and screen printed Ag/AgCl electrodes. A maximum pH sensitivity of 52.4 mV/pH was achieved for the EIS device textured with 70 nm particle size while the sensitivity with the planar dielectric was 37.1 mV/pH. The APTES modification enhanced the adsorption of H + ions by protonation of the -NH 2 to -NH 3 + sites as seen from the capacitance versus voltage (C-V) hysteresis voltages. UV-Vis absorption and photoluminescence (PL) spectra indicated that the surface defects on the textured surface increased with decreasing particle size. Zeta potential measurements suggested a combined acid-base behavior of textured surface with the formation of -NH Electrolyte-insulator-semiconductor (EIS) based sensors are advantageous because of their small size, potential for mass production at low cost and easy integration with other silicon devices. The working principle is based on the MOS device with the electrolyte replacing the metal. Chemical sensitivity is an important performance parameter and is defined as the change in potential at the insulatorelectrolyte interface occurring with the change in the pH of the electrolyte. To improve the sensitivity, various high-K dielectric materials (such as Si 3 N 4 , Al 2 O 3 , Ta 2 O 5 , Gd 2 O 3 , Pr 2 O 3 , TiO 2 , Er 2 O 3 , Sm 2 O 3 and HoTiO 3 ) have been used to enhance the field effect interaction and the buffer capacity of the insulator. Also, their stack reduces the interface defects between the semiconductor and the insulator. 1-8The surface modification is another way by which the sensitivity can be improved. For example, Cheng et al. 9 used hydroxylated surface modified with 3-aminopropyl triethoxysilane (APTES) to show slight enhancement in the pH sensitivity and attributed the changes to the added contribution of the -NH 2 groups having higher proton affinity with improved signal-to-noise ratio. He et al.10 observed a linear pH response with the combined acidic and basic characteristics of -NH 2 and -SiOH groups on the APTES modified ZnS/silica nanocable field effect transistor. Hsu et al.11 designed a glucose sensor based on a poly-silicon wire coated with a mixture of γ-APTES and silica nanoparticles (NPs). The improved detection limit was attributed to the large specific surface area of the silica NPs cluster and the increased amount of OH-bonds. Wu et al.12 fabricated a label free DNA detection device with sensitivity in the range 1 fM-10 μM by utilizing a mixture of UV illuminated γ-APTES and silica NPs. Further, Oh et al. 13 used silicon nanowires and improved the pH sensitivity from 54.9 mV/pH to 60.2 mV/pH. Xue et al.14 fabricated a Si/SiO 2 thin-film based ion-se...

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Section: Resultssupporting

confidence: 87%

Sensitivity Enhancement Mechanisms in Textured Dielectric based Electrolyte-Insulator-Semiconductor (EIS) Sensors

Kumar

Panda

2015

ECS J. Solid State Sci. Technol.

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“…and their stacks to reduce lattice mismatch are used to enhance the pH sensitivity with an objective to achieve the maximum sensitivity of 59.5mV/pH (the Nernstian limit) of field effect sensors. [5][6][7][8] But to achieve these higher sensitivity values with low drift and hysteresis, these materials are annealed at high temperatures (600 -900 o C). TFT based sensors fabricated using sputtered a-IGZO film as the active layer showed optimized performance at an annealing temperature of 400 o C; 1,3 therefore subjecting such devices to higher temperatures needed for annealing the high-k dielectrics could affect the transistor characteristics.…”

Section: Introductionmentioning

confidence: 99%

Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

Kumar

Panda

2015

AIP Advances

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The use of a-IGZO instead of the conventional high-k dielectrics as a pH sensitive layer could lead to the simplification of fabrication steps of field effect based devices. In this work, the pH sensitivities of a-IGZO films directly deposited over a SiO2/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS) structures. Annealing of the films was found to affect the sensitivity of the devices and the device with the film annealed at 400 oC in N2 ambience showed the better sensitivity, which reduced with further increase in the annealing temperature to 500 oC. The increased pH sensitivity with the film annealed at 400 oC in N2 gas was attributed to the enhanced lattice oxygen ions (based on the XPS data) and improved C-V characteristics, while the decrease in sensitivity at an increased annealing temperature of 500 oC was attributed to defects in the films as well as the induced traps at the IGZO/SiO2 interface based on the stretched accumulation and the peak in the inversion region of C-V curves. This study could help to develop a sensor where the material (a-IGZO here) used as the active layer in a thin film transistors (TFTs) possibly could also be used as the pH sensitive layer without affecting the TFT characteristics, and thus obviating the need of high-K dielectrics for sensitivity enhancement.

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“…7 shows drift properties of AAO membranes at various pore-widening times at pH 7. The drift rate in the reference voltage of the EIS over a long time period poses a serious challenge in the widespread application of the solid-state pH sensor [15,16]. Drift is known to increase slowly and monotonically with time when sensors are submerged in an electrolyte.…”

Section: Methodsmentioning

confidence: 99%

Structural and Electrical Properties of an Electrolyte-insulator-metal Device with Variations in the Surface Area of the Anodic Aluminum Oxide Template for pH Sensors

Kim¹,

Lee²,

Yeo³

et al. 2015

Journal of Electrical Engineering and Technology

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-In this study, we fabricated an electrolyte-insulator-metal (EIM) device incorporating a high-k Al 2 O 3 sensing membrane using a porous anodic aluminum oxide (AAO) through a two-step anodizing process for pH detection. The structural properties were observed by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction patterns (XRD). Electrochemical measurements taken consisted of capacitance-voltage (C-V), hysteresis voltage and drift rates. The average pore diameter and depth of the AAO membrane with a pore-widening time of 20 min were 123nm and 273.5nm, respectively. At a pore-widening time of 20 min, the EIM device using anodic aluminum oxide exhibited a high sensitivity (56mV/pH), hysteresis voltage (6.2mV) and drift rate (0.25mV/pH).

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Development of high-κ HoTiO3 sensing membrane for pH detection and glucose biosensing

Cited by 66 publications

References 39 publications

Sensitivity Enhancement Mechanisms in Textured Dielectric based Electrolyte-Insulator-Semiconductor (EIS) Sensors

Sensitivity Enhancement Mechanisms in Textured Dielectric based Electrolyte-Insulator-Semiconductor (EIS) Sensors

Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

Structural and Electrical Properties of an Electrolyte-insulator-metal Device with Variations in the Surface Area of the Anodic Aluminum Oxide Template for pH Sensors

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