Development of Highly Bendable Transparent Window Electrodes Based on MoOx, SnO2, and Au Dielectric/Metal/Dielectric Stacks: Application to Indium Tin Oxide (ITO)-Free Perovskite Solar Cells

Lucarelli, Giulia; Brown, Thomas M.

doi:10.3389/fmats.2019.00310

Cited by 31 publications

(15 citation statements)

References 59 publications

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“…4b ), indicating consistent performance levels under bending. This is not surprising because given the polyimide substrate thickness of only 5 μm, the materials encounter small strain values of ~0.06% at this bending radius 46 , and we expect that sub-millimeter bending radii should be possible given that materials involved have been shown to sustain strains of at least 0.5% 63 – 68 . We have investigated similar TMD, metal, and dielectric stacks in electronic devices in more detail in our recent work and found that there is no discernable change of electrical device properties 46 .…”

Section: Resultsmentioning

confidence: 92%

High-specific-power flexible transition metal dichalcogenide solar cells

et al. 2021

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Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact–TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: (1) transparent graphene contacts to mitigate Fermi-level pinning, (2) MoOx capping for doping, passivation and anti-reflection, and (3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of 4.4 W g−1 for flexible TMD (WSe2) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to 46 W g−1, creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics.

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Section: Resultsmentioning

confidence: 92%

High-specific-power flexible transition metal dichalcogenide solar cells

et al. 2021

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“…Regarding mechanical stability under bending, this is limited not by the perovskite or transport layers but by the flexibility of the ITO which has a safe bending radius of 7 mm, as shown in previous studies. 4 , 55 , 56 New transparent electrodes would need to be designed for going down to very low curvatures. 56 …”

Section: Resultsmentioning

confidence: 99%

“… 4 , 55 , 56 New transparent electrodes would need to be designed for going down to very low curvatures. 56 …”

Section: Resultsmentioning

confidence: 99%

Attributes of High-Performance Electron Transport Layers for Perovskite Solar Cells on Flexible PET versus on Glass

Dkhili

Lucarelli

Rossi

et al. 2022

ACS Appl. Energy Mater.

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Electron transport layers (ETLs) play a fundamental role in perovskite solar cells (PSCs) through charge extraction. Here, we developed flexible PSCs on 12 different kinds of ETLs based on SnO 2 . We show that ETLs need to be specifically developed for plastic substrates in order to attain 15% efficient flexible cells. Recipes developed for glass substrates do not typically transfer directly. Among all the ETLs, ZnO/SnO 2 double layers delivered the highest average power conversion efficiency of 14.6% (best cell 14.8%), 39% higher than that of flexible cells of the same batch based on SnO 2 -only ETLs. However, the cells with a single ETL made of SnO 2 nanoparticles were found to be more stable as well as more efficient and reproducible than SnO 2 formed from a liquid precursor (SnO 2 -LP). We aimed at increasing the understanding of what makes a good ETL on polyethylene terephthalate (PET) substrates. More so than ensuring electron transport (as seen from on-current and series resistance analysis), delivering high shunt resistances ( R SH ) and lower recombination currents ( I off ) is key to obtain high efficiency. In fact, R SH of PSCs fabricated on glass was twice as large, and I off was 76% lower in relative terms, on average, than those on PET, indicating considerably better blocking behavior of ETLs on glass, which to a large extent explains the differences in average PCE (+29% in relative terms for glass vs PET) between these two types of devices. Importantly, we also found a clear trend for all ETLs and for different substrates between the wetting behavior of each surface and the final performance of the device, with efficiencies increasing with lower contact angles (ranging between ∼50 and 80°). Better wetting, with average contact angles being lower by 25% on glass versus PET, was conducive to delivering higher-quality layers and interfaces. This cognizance can help further optimize flexible devices and close the efficiency gap that still exists with their glass counterparts.

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“…Moreover, it has a higher mobility and a spike rate similar to other materials (its low-field mobility reaches 14,000 cm 2 /V•s, the peak rate reaches 4.3 × 10 7 cm/s), and its electron transport rate is not affected by the temperature. Compared with extensive application of ZnO thin film materials (Lucarelli and Brown, 2019;Marikutsa et al, 2019;Pereira and Hatton, 2019;Qi et al, 2019Qi et al, , 2020aTharsika et al, 2019;Yu et al, 2019), all these properties endow InN unique advantages in the development and production of devices, such as highfrequency, high-speed transistors.…”

Section: Introductionmentioning

confidence: 99%

Study on Preparation and Properties of InN Films on Self-Supporting Diamond Substrates Under Different Nitrogen Flows

et al. 2020

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Several InN film samples with superb properties were prepared on a self-supporting diamond substrate for different nitrogen flow rates using an electron cyclotron resonance plasma-enhanced metal-organic chemical vapor deposition (ECR-PEMOCVD) system. After the InN film samples were obtained, the samples were characterized via reflected high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscope (AFM), and electron probe micro-analysis (EPMA) to study the effect of the nitrogen flow on the quality of the InN films. The experimental results show that the variation in the nitrogen flow has a great impact on the preferential growth of the (0002) crystal plane of the InN thin film. By increasing the nitrogen flow moderately, the crystal quality of the film is improved. Under the growth condition of appropriate nitrogen flow, InN thin films with a preferred orientation along the c-axis can be obtained, and the surface of the resulting InN thin films is relatively flat. However, a high nitrogen flow does not improve the film crystal quality. The results of the experiment and of the analysis show that the InN films prepared with a nitrogen flow rate of 80 sccm have an excellent preferential orientation. The result of the EPMA test shows that the percentages of the In and N atoms in the prepared film samples are close to a ratio of 1:1, and a small amount of metal In droplets is present. In addition, the InN thin films prepared in such condition have an excellent surface morphology and composition.

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Development of Highly Bendable Transparent Window Electrodes Based on MoOx, SnO2, and Au Dielectric/Metal/Dielectric Stacks: Application to Indium Tin Oxide (ITO)-Free Perovskite Solar Cells

Abstract: Disclaimer: The article reflects the views of the authors and the funding agencies are not responsible for any use that may be made of the information that it contains.

Cited by 31 publications

References 59 publications

High-specific-power flexible transition metal dichalcogenide solar cells

High-specific-power flexible transition metal dichalcogenide solar cells

Attributes of High-Performance Electron Transport Layers for Perovskite Solar Cells on Flexible PET versus on Glass

Study on Preparation and Properties of InN Films on Self-Supporting Diamond Substrates Under Different Nitrogen Flows

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