Development of highly robust nano-mixed Hf/sub x/Al/sub y/O/sub z/ dielectrics for TiN/Hf/sub x/Al/sub y/O/sub z//TiN capacitor applicable to 65nm generation DRAMs

Kil, Deok–Sin; Hong, Kwon Ho; Lee, Kee-Jeung; Kim, Joosung; Song, Han-Sang; KiSeon, Park; Roh, Jae–Sung; Sohn, Hyunchul; Kim, Jinwoong; Park, Sung Wook

doi:10.1109/vlsit.2004.1345432

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. 2004

DOI: 10.1109/vlsit.2004.1345432

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Development of highly robust nano-mixed Hf/sub x/Al/sub y/O/sub z/ dielectrics for TiN/Hf/sub x/Al/sub y/O/sub z//TiN capacitor applicable to 65nm generation DRAMs

Deok–Sin Kil

Kwon Ho Hong

Kee-Jeung Lee

et al.

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Oxide-Nitride Storage Dielectric Formation in a Single-Furnace Process for Trench DRAM

Chang²,

Wang³

et al. 2006

IEEE Electron Device Lett.

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Abstract-A simplified and integrated technique has been proposed to form an oxide/nitride storage dielectric in a single-furnace process by low-pressure oxidation and nitride film deposition with an extra N 2 O treatment for the trench dynamic random access memory (DRAM). Compared to the conventional nitride/oxide dielectric, this newly developed dielectric enjoys cellcapacitance-enhancement factor as high as 12.5% without degrading the leakage current and electron-trapping property. From the reliability test, the qualification for the DRAM application is also proven by the dielectric lifetime longer than 10-years. Most importantly, this technique can reduce the production cycle time without an additional equipment investment, which is essential in the cost-competitive DRAM arena.Index Terms-N 2 O treatment, oxide/nitride (ON) stack, singlefurnace process, storage dielectric, trench dynamic random access memory (DRAM).

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Oxide-Nitride Storage Dielectric Formation in a Single-Furnace Process for Trench DRAM

Chang²,

Wang³

et al. 2006

IEEE Electron Device Lett.

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Development of highly robust nano-mixed Hf/sub x/Al/sub y/O/sub z/ dielectrics for TiN/Hf/sub x/Al/sub y/O/sub z//TiN capacitor applicable to 65nm generation DRAMs

Cited by 1 publication

References 1 publication

Oxide-Nitride Storage Dielectric Formation in a Single-Furnace Process for Trench DRAM

Oxide-Nitride Storage Dielectric Formation in a Single-Furnace Process for Trench DRAM

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