Development of hybrid electrical model for CNT based Through Silicon Vias

Kannan, Kaushal; Kannan, Sukeshwar; Kim, Bruce; Cho, Sang-Bock

doi:10.1109/iscas.2013.6572023

Cited by 4 publications

(3 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, some researchers have developed CNT based TSV for interconnect applications through different fabrication process including low temperature CNT growth [18], wafer level TSV interconnects [19] and bottom-up filling of TSVs [20]. Furthermore, simulations have predicted that CNT TSVs should perform well in terms of electrothermal performance [21], high frequency application [22] and hybrid electrical performance [23]. However, in real applications, the electrical resistivity of CNT TSVs is still several orders of magnitude higher than that of copper TSVs due to their porous structure [24].…”

Section: Introductionmentioning

confidence: 99%

Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects

Sun

Edwards

et al. 2016

Nanotechnology

View full text Add to dashboard Cite

For future miniaturization of electronic systems using 3D chip stacking, new fine-pitch materials for through-silicon-via (TSV) applications are likely required. In this paper, we propose a novel carbon nanotube (CNT)/copper nanocomposite material consisting of high aspect ratio, vertically aligned CNT bundles coated with copper. These bundles, consisting of hundreds of tiny CNTs, were uniformly coated by copper through electroplating, and aspect ratios as high as 300:1 were obtained. The resistivity of this nanomaterial was found to be as low as ∼10(-8) Ω m, which is of the same order of magnitude as the resistivity of copper, and its temperature coefficient was found to be only half of that of pure copper. The main advantage of the composite TSV nanomaterial is that its coefficient of thermal expansion (CTE) is similar to that of silicon, a key reliability factor. A finite element model was set up to demonstrate the reliability of this composite material and thermal cycle simulations predicted very promising results. In conclusion, this composite nanomaterial appears to be a very promising material for future 3D TSV applications offering both a low resistivity and a low CTE similar to that of silicon.

show abstract

Section: Introductionmentioning

confidence: 99%

Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects

Sun

Edwards

et al. 2016

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…If used with current technologies, CNTs and CNFs will have to be interfaced with other materials including other interconnect materials such as Cu. For instance, CNTs can be used in vertical interconnects such as Through Silicon Vias (TSVs) in microelectronics [13][14][15][16]. Issues associated with fabricating standalone CNTs and CNFs include low mechanical stability, interface resistance and low density.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of carbon nanotube/copper and carbon nanofiber/copper composites for microelectronics

Ladani

Awad

She³

et al. 2017

Materials Today Communications

View full text Add to dashboard Cite

Carbon Nanotubes (CNTs) and Carbon Nanofibers (CNFs) exhibit high ampacity, the key property needed for next-generation interconnects, at miniaturized scales. Copper (Cu), the current state-of-the-art material used in interconnects, faces reliability issues at further miniaturized scales. This is due to high current density causing electromigration of Cu atoms. Therefore, CNTs and CNF were proposed to replace Cu in next-generation microelectronics. Using standalone CNT or CNF structures is very challenging and achieving the same properties as an individual CNT or CNF is difficult. The difficulty arises because the electrical properties of a grown forest depend on characteristics of the forest including self-alignment, density and mechanical stability. Thus, in this study, Cu is used to densify self-aligned CNTs and CNFs so that the mechanical stability and high density can be achieved. Parameters that impact the quality of the final Cu-CNT composite layer including the CNT qualities and fabrication techniques, CNT underlayer effect and different Cu deposition techniques are investigated. Different Cu deposition techniques on the as-grown CNTs are also experimented including electroplating, electroless plating and physical vapor deposition (PVD). The experiments show that although CNFs were successfully coated with Cu using electroless plating, CNTs are found to be fragile and are dissolved during the process of electroless plating. Furthermore, it was found that CNTs cannot act as seed layer for Cu. Other underlayer material such as Ti and TiN were found difficult to work with due to several reasons. Ti and TiN were not found a good material to grow vertically aligned CNTs using CVD. However, PECVD combined with TiN underlayer was successful in obtaining vertically aligned CNTs, although with a much slower growth rate compared to CNTs grown on Al 2 O 3 underlayer. However, TiN was not successful in terms of electroplating.

show abstract

“…Researchers were able to report CNT/Cu composite that attained similar conductivity to Cu but with 100 times higher ampacity [1]. One particular approach in utilizing CNTs is to use vertically aligned CNT through-silicon vias (CNT-TSVs) [3][4][5]. However, CNT-TSVs have not shown improved performance compared to Cu-TSVs for several reasons, including low density of the as-grown CNT bundles, interface resistivity between CNTs and other metallic contacts, and the mechanical stability of the CNT bundles.…”

Section: Introductionmentioning

confidence: 99%

Mechanical integrity of a carbon nanotube/copper-based through-silicon via for 3D integrated circuits: a multi-scale modeling approach

Awad

Ladani

2015

Nanotechnology

View full text Add to dashboard Cite

Carbon nanotube (CNT)/copper (Cu) composite material is proposed to replace Cu-based through-silicon vias (TSVs) in micro-electronic packages. The proposed material is believed to offer extraordinary mechanical and electrical properties and the presence of CNTs in Cu is believed to overcome issues associated with miniaturization of Cu interconnects, such as electromigration. This study introduces a multi-scale modeling of the proposed TSV in order to evaluate its mechanical integrity under mechanical and thermo-mechanical loading conditions. Molecular dynamics (MD) simulation was used to determine CNT/Cu interface adhesion properties. A cohesive zone model (CZM) was found to be most appropriate to model the interface adhesion, and CZM parameters at the nanoscale were determined using MD simulation. CZM parameters were then used in the finite element analysis in order to understand the mechanical and thermo-mechanical behavior of composite TSV at micro-scale. From the results, CNT/Cu separation does not take place prior to plastic deformation of Cu in bending, and separation does not take place when standard thermal cycling is applied. Further investigation is recommended in order to alleviate the increased plastic deformation in Cu at the CNT/Cu interface in both loading conditions.

show abstract

Development of hybrid electrical model for CNT based Through Silicon Vias

Cited by 4 publications

References 17 publications

Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects

Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects

Fabrication of carbon nanotube/copper and carbon nanofiber/copper composites for microelectronics

Mechanical integrity of a carbon nanotube/copper-based through-silicon via for 3D integrated circuits: a multi-scale modeling approach

Contact Info

Product

Resources

About