Development of InGaP/GaAs/InGaAs inverted triple junction concentrator solar cells

Sasaki, Kazuaki; Agui, T.; Nakaido, Katsuya; Takahashi, Naoki; Onitsuka, Ryusuke; Takamoto, Tatsuya

doi:10.1063/1.4822190

Cited by 164 publications

(110 citation statements)

References 2 publications

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“…Examples are dilute nitride semiconductors like GaInNAs [4] or inverted metamorphic GaInAs [5]. These solar cells reach efficiencies up to 44.4 % at 302 sun concentration [6,7]. The performance can be further improved by adding additional junctions.…”

Section: Introductionmentioning

confidence: 99%

Wafer bonded four‐junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

Dimroth

Grave

Beutel

et al. 2014

Progress in Photovoltaics

542

301

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Triple-junction solar cells from III-V compound semiconductors have thus far delivered the highest solar-electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but material quality and the choice of bandgap energies turn out to be even more importance than the number of junctions. Several four-junction solar cell architectures with optimum bandgap combination are found for lattice-mismatched III-V semiconductors as high bandgap materials predominantly possess smaller lattice constant than low bandgap materials. Direct wafer bonding offers a new opportunity to combine such mismatched materials through a permanent, electrically conductive and optically transparent interface. In this work, a GaAs-based top tandem solar cell structure was bonded to an InP-based bottom tandem cell with a difference in lattice constant of 3.7%. The result is a GaInP/GaAs//GaInAsP/GaInAs four-junction solar cell with a new record efficiency of 44.7% at 297-times concentration of the AM1.5d (ASTM G173-03) spectrum. This work demonstrates a successful pathway for reaching highest conversion efficiencies with III-V multi-junction solar cells having four and in the future even more junctions.

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Section: Introductionmentioning

confidence: 99%

Wafer bonded four‐junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

Dimroth

Grave

Beutel

et al. 2014

Progress in Photovoltaics

542

301

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“…Однако приблизиться к теоретическому пределу эффективности преобразования энергии [1,2] пока не удается, поэтому в настоящее время ведется поиск конструктивных и технологических решений, позволяющих уменьшить не только внешние, но и внутренние фундаментальные потери в А III В V ФЭП. Одним из наиболее успешных решений, позволяющих снизить фундаментальные поте-ри на термализацию носителей и неполное поглощение света, являются многопереходные (каскадные) солнеч-ные элементы (КСЭ) [1,3], в частности, на основе си-стемы материалов InGaP/Ga(In)As/Ge, согласованных по параметру решетки [4], а также на основе метаморфных гетероструктур, продемонстрировавших лабораторный рекорд эффективности -более 44% [5].…”

Section: Introductionunclassified

In-=SUB=-0.8-=/SUB=-Ga-=SUB=-0.2-=/SUB=-As квантовые точки для GaAs-фотопреобразователей: особенности роста, исследование методом металлорганической газофазной эпитаксии, и свойства

Салий¹,

Косарев²,

Минтаиров³

et al. 2018

Физика И Техника Полупроводников

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The growth peculiarities of In_0.8Ga_0.2As quantum dots and their arrays on GaAs surface by metalorganic vapor-phase epitaxy are investigated. The bimodal size distribution of In_0.8Ga_0.2As quantum dots is established from the photoluminescence spectra recorded at different temperatures. The growth parameters were determined at which the stacking of 20 In_0.8Ga_0.2As quantum-dot layers in the active area of a GaAs solar cell makes it possible to enhance the photogenerated current by 0.97 and 0.77 mA/cm^2 for space and terrestrial solar spectra, respectively, with the high quality of the p–n junction retained. The photogenerated current in a solar cell with quantum dots is higher than in the reference GaAs structure by ~1% with regard to nonradiative-recombination loss originating from stresses induced by the quantum-dot array.

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“…The resulted structure consisted of 65 layers and had a thickness of 3490. 4 where S is the substrate in this case it's BK7 and A stands for air.…”

Section: Thin Film Designmentioning

confidence: 99%

“…Each has its own spectral response range, the first cell is InGaP/InGaAs/Ge triple junction solar cell with high spectral response in the range from 400 nm to 1700 nm [3], and the other is InGaP/GaAs/InGaAs triple junction solar cell with high spectral response in the range from 400 nm to 1100 nm [4]. We used thin film filter to utilize the part of solar spectrum which is beneficial to the solar cell while reflecting the rest of the long wavelength spectrum which will result in reduce of the cell temperature.…”

Section: Introductionmentioning

confidence: 99%

Designing of long wavelength cut thin film filter for temperature reduction of concentrator photovoltaic

Ahmad

Hatakeyama

Ota

et al. 2016

MATEC Web of Conferences

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Abstract. This paper presents a comparison of three-dimensional simulation for concentrator photovoltaic module using two types of multi-junction solar cell. Each had its own range of spectral response and based on that range a thin film filter was developed for each case to reflect the unused spectral of the solar spectrum and allowed the desired spectrum to reach the solar cell. The thin film was deposited on a secondary optical element that was used to homogenize the irradiance distribution on the solar cell. A thermal simulation was conducted to compare the resulted decrease in cell temperature due to the use of the thin film for each case.

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Development of InGaP/GaAs/InGaAs inverted triple junction concentrator solar cells

Cited by 164 publications

References 2 publications

Wafer bonded four‐junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

Wafer bonded four‐junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

In-=SUB=-0.8-=/SUB=-Ga-=SUB=-0.2-=/SUB=-As квантовые точки для GaAs-фотопреобразователей: особенности роста, исследование методом металлорганической газофазной эпитаксии, и свойства

Designing of long wavelength cut thin film filter for temperature reduction of concentrator photovoltaic

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