Development of large single-crystal SiC substrates

Abstract

This article reviews the recent development of large single‐crystal silicon carbide (SIC) substrates. The technological potential of SiC for high‐power, high‐temperature, and high‐frequency electronic devices has been recognized for several decades; however, such applications have been largely hindered by problems related to bulk crystal growth. The SiC bulk crystal growth technology has recently achieved drastic improvement and enabled the growth of large high‐quality single crystals. Due to the availability of large high‐quality substrates, progress in SiC thin‐film epitaxy and devices has been rapid, and application of SiC to many fields is fast reaching its real potential. © 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(6): 8–19, 1998

Novel semiconductor materials for advanced supercapacitors

“…It has a tunable wide bandgap, high electron mobility, and stable chemical properties, 66,67 which has attracted broad research interests. These unique physicochemical properties make SiC considered an ideal candidate for power electronics, 68 lightemitting diodes 69 and sensors. 70 It is well known that siliconbased SCs are considered as promising energy storage devices due to their compatibility with modern electronic devices and high energy density.…”

The role of NaOH and papaya latex bio-activator during production of carbon nanoparticle from rice husks

“…As one of the most important semiconductor compounds, silicon carbide (SiC) has shown an extraordinary characteristic such as wide band gap, high strength, high thermal conductivity, good shock thermal resistance, low thermal expansion, and an excellent chemical inertness [9,10]. The unique characteristics of SiC make it as an ideal candidate for power electronics, electronics for hostile environment, diodes of blue light transilluminator, sensor, composite and supported heterogeneous catalysts [11][12][13][14][15][16][17][18][19]. With low dimension, the presence of quantum effect and shape effect, nanostructure is expected to be able to show characteristics which might not be possessed by most of other semiconductor mat erials.…”

The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source

“…Single crystalline SiC is a suitable material for realization of high power, high frequency and high temperature devices [1]. The control of doping concentration for single crystals and epitaxial layers is important for producing semiconductor devices based on SiC.…”

“…High nitrogen doping concentration of 6H-SiC grown on the C-face was also achieved to < 10 20 cm -3 [2]. However, the probability of formation of the 4H polytype is increased if a highly doped 6H-SiC crystal is grown on C-face seed [1,3]. Therefore, a Si-face seed has to be used for highly doped 6H-SiC crystal growth without the different polytypes.…”