Development of low-cost high-performance multispectral camera system at Banpil

Oduor, Patrick; Mizuno, Genki; Olah, Robert; Dutta, Achyut K.

doi:10.1117/12.2058153

Cited by 6 publications

(10 citation statements)

References 1 publication

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“…In this case, the material selection is focused on HgCdTe and InGaAs. In Patrick Oduor et al's study [23], it was mentioned that InGaAs detector wafers could be processed using MOCVD (metal-organic chemical vapor deposition) technology, which can process dozens of wafers at a time. As for HgCdTe, it can only grow one wafer at a time using MBE (molecular beam epitaxy) technology with a high production and processing cost.…”

Section: Low Pricementioning

confidence: 99%

“…In many scenarios where high and relatively low brightness exist simultaneously, dynamic switching occurs, such as under strong direct light, reflective environment, and accessing tunnels and caves; HDR can greatly enhance the user's ability to obtain more DR, real-time image details and situation information [42][43][44]. The Banpil image sensor developed by Patrick Oduor et al [23] has a dynamic range of >190 dB at the system level due to the ROIC and FPA technologies used in this sensor. So HDR of the Banpil image sensor allows the camera to acquire information about scenes with rapid changes in brightness, for example, from darkness to high brightness in the same frame or in successive frames.…”

Section: Hdr Large Fov and Dynamic Windowingmentioning

confidence: 99%

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Development and Core Technologies for Intelligent SWaP3 Infrared Cameras: A Comprehensive Review and Analysis

Jiao

Zhao

Pan

et al. 2023

Sensors

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With the development of infrared detection and imaging technology, infrared cameras (IRCs) play an important role in many fields, such as military, industry, and civilian. Additionally, the requirements for the size, performance, and intelligence of IRCs are becoming more and more strict. Consequently, the associated research and development (R&D) of IRCs is gradually focused on the aspects of miniaturization, high performance, intelligence, low power consumption, and low cost, involving many frontier fields, including artificial intelligence, new materials, new optical systems, and electronics systems. In fact, there are continual studies on intelligent SWaP3 IRCs, but unfortunately, a systematic arrangement and analysis are lacking. Therefore, a systematical and comprehensive review for the developments and core technologies of the intelligent SWaP3 IRCs is really needed. In this paper, in terms of the aforementioned requirements, we conduct a review and analysis of current intelligent SWaP3 IRCs based on 90 literature and statistics in recent decades to provide the relevant developers with a helpful reference for facilitating the indicator optimization of intelligent SWaP3 IRCs with new developed technologies. We analyze the development of SWaP3 IRCs in the aspects of lightweight, miniaturization, low price, and high performance, including hyperspectral resolution, high spatial resolution, large field of view (FOV), and wide dynamic elaborately. Moreover, the development in low power consumption and intelligence is also discussed in detail. Additionally, we briefly summarize the primary applications of intelligent SWaP3 IRCs in military, scientific, and civil. Then, the core technologies comprising high-integration, lightweight, hyperspectral imaging (HSI), low-power consumption, as well as the realization of high performance such as high-resolution, high-frame, and wide-dynamic range of SWaP3 IRCs are discussed and analyzed in detail. Finally, we prospect for the intelligent SWaP3 IRCs that it is necessary to continuously expand the concept of SWaP3 by reliability, stability, extensibility, and safety. In addition, it is useful to embed cutting-edge technologies such as small pixel pitch array, multi-sensors fusion, and deploy intelligent algorithms to IRCs. Additionally, the improvement of the whole machine from multi-dimension such as chip, camera, and system is expected and needs to be taken more seriously. It is hoped that this paper can provide a reference for the R&D of intelligent SWaP3 IRCs in the future.

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Section: Low Pricementioning

confidence: 99%

Section: Hdr Large Fov and Dynamic Windowingmentioning

confidence: 99%

Development and Core Technologies for Intelligent SWaP3 Infrared Cameras: A Comprehensive Review and Analysis

Jiao

Zhao

Pan

et al. 2023

Sensors

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“…This system helps fighters in the battle zone collect visual information and transmit the data wirelessly within 120 feet. Odour et al [ 49 ] explained the low-cost multispectral camera developed by Banpil Photonics (city, state abbrev if USA, country). It is a high-performance short wave infrared imaging camera, most suitable for military applications like threat detection during the day and at night, in all weather conditions.…”

Section: Cmos Image Sensor Applicationsmentioning

confidence: 99%

CMOS Image Sensors in Surveillance System Applications

Sukhavasi

Elleithy

Abuzneid

et al. 2021

Sensors

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Recent technology advances in CMOS image sensors (CIS) enable their utilization in the most demanding of surveillance fields, especially visual surveillance and intrusion detection in intelligent surveillance systems, aerial surveillance in war zones, Earth environmental surveillance by satellites in space monitoring, agricultural monitoring using wireless sensor networks and internet of things and driver assistance in automotive fields. This paper presents an overview of CMOS image sensor-based surveillance applications over the last decade by tabulating the design characteristics related to image quality such as resolution, frame rate, dynamic range, signal-to-noise ratio, and also processing technology. Different models of CMOS image sensors used in all applications have been surveyed and tabulated for every year and application.

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“…In this paper, we will demonstrate a 2-dimensional p-i-n (hereafter also mentioned as PIN) array at room temperature. Based on our previous low-dark current p-i-n designs, the improvements were focused on the p-i-n device structure to minimize the surface leakage current and the junction diffusion current [4][5][6][7][8]. This photodetector has a broadband spectral response, and reduces the need for separate detectors in the range of 1 to 2 µm.…”

Section: Introductionmentioning

confidence: 99%

Development of high performance SWIR InGaAs focal plane array

et al. 2015

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Banpil Photonics has developed a novel InGaAs based photodetector array for Short-Wave Infrared (SWIR) imaging, for the most demanding security, defense, and machine vision applications. These applications require low noise from both the detector and the readout integrated circuit arrays. In order to achieve high sensitivity, it is crucial to minimize the dark current generated by the photodiode array. This enables the sensor to function in extremely low light situations, which enables it to successfully exploit the benefits of the SWIR band. In addition to minimal dark current generation, it is essential to develop photodiode arrays with higher operating temperatures. This is critical for reducing the power consumption of the device, as less energy is spent in cooling down the focal plane array (in order to reduce the dark current). We at Banpil Photonics are designing, simulating, fabricating and testing SWIR InGaAs arrays, and have achieved low dark current density at room temperature. This paper describes Banpil's development of the photodetector array. We also highlight the fabrication technique used to reduce the amount of dark current generated by the photodiode array, in particular the surface leakage current. This technique involves the deposition of strongly negatively doped semiconductor material in the area between the pixels. This process reduces the number of dangling bonds present on the edges of each pixel, which prevents electrons from being swept across the surface of the pixels. This in turn drastically reduces the amount of surface leakage current at each pixel, which is a major contributor towards the total dark current. We present the optical and electrical characterization data, as well as the analysis that illustrates the dark current mechanisms. Also highlighted are the challenges and potential opportunities for further reduction of dark current, while maintaining other parameters of the photodiode array, such as size, weight, temperature of peak performance (lowest dark current), and power consumption.

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Development of low-cost high-performance multispectral camera system at Banpil

Cited by 6 publications

References 1 publication

Development and Core Technologies for Intelligent SWaP3 Infrared Cameras: A Comprehensive Review and Analysis

Development and Core Technologies for Intelligent SWaP3 Infrared Cameras: A Comprehensive Review and Analysis

CMOS Image Sensors in Surveillance System Applications

Development of high performance SWIR InGaAs focal plane array

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