Development of low-temperature bonding platform using ultra-thin area selective deposition for heterogeneous integration

Measurement of Thermal Stress by X-ray Nano-Diffraction in (111)-Oriented Nanotwinned Cu Bumps for Cu/SiO2 Hybrid Joints

“…Thus, Cu/SiO 2 or Cu/SiCN hybrid bonds have replaced the solder joints in HPC devices [4][5][6][7][8][9][10][11][12][13][14]. However, the current temperature to achieve Cu hybrid bonding is about 300 • C. Several studies propose different approaches to achieve low-temperature bonding, including (111)-oriented nano-twinned Cu, adoption of the passivation layer, and plasma treatment [10,[15][16][17][18][19][20][21][22][23][24]. Using the rapid surface diffusion on (111)-preferred surfaces, one can reduce the bonding temperature to 150 • C [16].…”