Development of metal silicides for deep submicron polycrystalline silicon gate

Abstract

Chapter 1: Introduction 1.1 General Overview 1.2 Objectives Chapter 2: Background 2.1 Fundamentals of Thin Film Reaction 2.2 Growth Kinetics of Titanium Silicide 2.3 Microstructural Aspects and Mechanism of C49-to-C54 2.4 Issues affecting formation in Narrow Linewidth 2.4.1 Film Thickness Effect 2.4.2 Narrow Linewidth Effect 2.4.3 Stress Effect 2.4.4 Dopants Effect 2.5 Ways of improving C54 phase formation 2.5.1 Preamorphisation (PAI & ITM) 2.5.2 Bilayer Alloy and alloy implantation 2.5.3 Spike Annealing. .