Development of methods for separation of binarized fragments of etching pits of semiconductor wafer

Самойлов, Андрей Николаевич; Shevchenko, Igor

doi:10.15587/2312-8372.2016.71988

Cited by 5 publications

(2 citation statements)

References 6 publications

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“…All fragments in the plane of a digital raster image can be divided into significant and insignificant fragments [12].…”

Section: Methodsmentioning

confidence: 99%

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Grouping Method of Image Fragments of Adjacent Dislocation Etch Pits of the Semiconductor Wafer

Shevchenko

2016

EUREKA: Physics and Engineering

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An increase in production volumes of gallium arsenide semiconductor devices determines the need for better control of dislocations of semiconductor wafer. The grouping method of image fragments of adjacent dislocation etch pits of the semiconductor wafer is proposed in the article. Adjacent fragments will be allocated in the pre-binarized image of wafer surface, which contains adjacent fragments of etch pits of dislocation loops after treatment by the described method. Improved methods for determining the loop line width determines the edge line width of etch pits of suspected dislocations, given the variability of their display in the binarized image. The current loop line width is compared to the reference line width of the dislocation loop. The grouping method of image fragments of adjacent dislocation etch pits of the semiconductor wafer defines recovery of loop lines branching, takes into account various options of line adjacency and determines the direction of further recovery of loop line of dislocation etch pits. A step by step description of the method is given.

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“…All fragments in the plane of a digital raster image can be divided into significant and insignificant fragments [12].…”

Section: Methodsmentioning

confidence: 99%

“…A plurality of fragments А for binarized image with accentuated contours after applying adaptive binarization J2 with parameter C=15 [12,13] can be described by the formula:…”

Section: Methodsmentioning

confidence: 99%

Grouping Method of Image Fragments of Adjacent Dislocation Etch Pits of the Semiconductor Wafer

Shevchenko

2016

EUREKA: Physics and Engineering

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Increase Quality of Gaas Monocrystals for Solar Energy Devices Due to Control of Dislocations Using Alhorithm of Detection of Contour Lines of Etching Pits on Surface Waffer Semiconductor

Samoilov

Rylova

Vladislav

2022

2022 IEEE 4th International Conference on Modern Electrical and Energy System (MEES)

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Methods of dislocation structure characterization in AIIIBV semiconductor single crystals

Knyazev

Kudrya

Komarovskiy

et al. 2023

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

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The development pace of advanced electronics raises the demand for semiconductor single crystals and strengthens the requirements to their structural perfection. Dislocation density and distribution pattern are most important parameters of semiconductor single crystals which determine their performance as integrated circuit components. Therefore studies of the mechanisms of dislocation nucleation, slip and distribution are among the most important tasks which make researchers face the choice of suitable analytical methods. This work is an overview of advanced methods of studying and evaluating dislocation density in single crystals. Brief insight has been given on the main advantages and drawbacks of the methods overviewed and experimental data have been presented. The selective etching method (optical light microscopy) has become the most widely used one and in its conventional setup is quite efficient in the identification of scrap defects and in dislocation density evaluation by number of etch pits per vision area. Since the introduction of digital light microscopy and the related transfer from image analysis to pixel intensity matrices and measurement automation, it has become possible to implement quantitative characterization for the entire cross-section of single crystal wafers and analyze structural imperfection distribution pattern. X-ray diffraction is conventionally used for determination of crystallographic orientation but it also allows evaluating dislocation density by rocking curve broadening in double-crystal setup. Secondary electron scanning electron microscopy and atomic force microscopy allow differentiating etch patterns by origin and studying their geometry in detail. Transmission electron microscopy and induced current method allow obtaining micrographs of discrete dislocations but require labor-consuming preparation of experimental specimens. X-ray topography allows measuring bulky samples and also has high resolution but is hardly suitable for industry-wide application due to the high power consumption of measurements.Digital image processing broadens the applicability range of basic dislocation structure analytical methods in materials science and increases the authenticity of experimental results.

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Development of methods for separation of binarized fragments of etching pits of semiconductor wafer

Cited by 5 publications

References 6 publications

Grouping Method of Image Fragments of Adjacent Dislocation Etch Pits of the Semiconductor Wafer

Grouping Method of Image Fragments of Adjacent Dislocation Etch Pits of the Semiconductor Wafer

Increase Quality of Gaas Monocrystals for Solar Energy Devices Due to Control of Dislocations Using Alhorithm of Detection of Contour Lines of Etching Pits on Surface Waffer Semiconductor

Methods of dislocation structure characterization in AIIIBV semiconductor single crystals

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