Development of new photoresist stripping agent

Chu, C.W.; Hsu, Te-Jung; Chiang, Tzu-Hsing; Wang, Yung-Ming; Wang, Shiu-Chin; Yang, Ping-Feng

doi:10.1109/impact.2014.7048392

Cited by 2 publications

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“…Photoresist films are mainly composed of polymers and photosensitizers and possess both etching resistance and light-induced developer solubility. These films are widely known as chemical agents for forming fine metal patterns in applications such as liquid crystal displays, semiconductor devices, microelectromechanical systems, and integrated circuits. − Typically, a photoresist film is stripped quickly and completely from the substrate after etching, as the residual photoresist can cause wiring abnormalities or disconnections in subsequent manufacturing processes. Amine-type agents, such as monoethanolamine and N -methylpyrrolidone, are often used as strippers for photoresist films; however, these agents may damage the metal surface. , Hence, alternatives to these reagents are required to avoid potential damage to the metal surface.…”

Section: Introductionmentioning

confidence: 99%

Anti-adsorption Mechanism of Photoresist by Pluronic Surfactants: An Insight into Their Adsorbed Structure

et al. 2023

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Photoresist stripping is the final step in the photolithography process that forms fine patterns for electronic devices. Recently, a mixture of ethylene carbonate (EC) and propylene carbonate (PC) has attracted attention as a new stripper based on its eco-friendliness and anti-corrosiveness. However, the EC/PC mixture causes re-adsorption of the photoresist during a process of subsequent water rinsing. In this study, we characterized the adsorption/ desorption of the photoresist and a triblock Pluronic surfactant [poly(ethylene oxide)−poly(propylene oxide)−poly(ethylene oxide)] as a blocking agent on an indium tin oxide (ITO) substrate. In addition, we evaluated the dispersion of photoresist particles. The photoresist polymer formed a thin and rigid adsorption layer on an ITO substrate in the EC/PC mixture. When water was injected into the EC/PC mixture and the photoresist solutions, the photoresist polymer aggregated and was then deposited on the substrate. In contrast, the addition of Pluronic surfactant F-68 (PEO 79 PPO 30 PEO 79 ) into the EC/PC mixture remarkably decreased the residual amount of the photoresist on the ITO after water injection. This variation was attributed to the PEO blocks of F-68 extended to the solution phase, whereas the PPO blocks of F-68 functioned as anchors for adsorption onto the photoresist. Therefore, the F-68adsorbed layer prevented interaction between the photoresist particles or the photoresist and the ITO surface, which provides potential for future applications as new stripping agents with high removal performance.

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Section: Introductionmentioning

confidence: 99%

Anti-adsorption Mechanism of Photoresist by Pluronic Surfactants: An Insight into Their Adsorbed Structure

et al. 2023

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“…Generally, wet chemical stripping has two general types [20]. (i) Organic solvent dissolution approach [21][22][23]. Positive photoresist, which is soluble in a large number of organic solvent, was stripped in either acetone [20], isopropyl alcoholor methyl ethyl ketone, but that solvent is hard to remove negative photoresist.…”

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confidence: 99%

Double‐layer resist method to improve descum result when removing negative photoresist

Yang

Wang

et al. 2019

Micro & Nano Letters

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A novel double-layer resist method was presented in this work to decrease the negative photoresist scum. Positive photoresist was chosen as the bottom layer resist and negative photoresist as the top layer resist. This work studied the effect of viscosity and thickness of bottom layer resist on the mean number of scum. The experiment shows that the low viscosity positive photoresist AZ703, with the spin speed of 3000 r/min and the thickness of 1.10 um, had prominent effect on the removal of photoresist. To minimise the area of the top layer contact with substrate and further reduce the scum, 8 µm was selected as the optimal retracting distance d of the bottom layer resist.

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Development of new photoresist stripping agent

Cited by 2 publications

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Anti-adsorption Mechanism of Photoresist by Pluronic Surfactants: An Insight into Their Adsorbed Structure

Anti-adsorption Mechanism of Photoresist by Pluronic Surfactants: An Insight into Their Adsorbed Structure

Double‐layer resist method to improve descum result when removing negative photoresist

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