Development of next-generation mask inspection method by using the feature of mask image captured with 199-nm inspection optics

Tsuji, Yoshitake; Kikuiri, Nobutaka; Murakami, Shingo; Takahara, Kenichi; Isomura, Ikunao; Tamura, Yukio; Yamashita, K.; Hirano, Ryoichi; Tateno, Motonari; Matsumura, Kenichi; Takayama, Naohisa; Usuda, Kinya

doi:10.1117/12.692811

Cited by 5 publications

(1 citation statement)

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“…Activities of such tool development have been reported recently. 4 Potential alternatives include an inspection of the aerial image (using both exposure wavelength and correct optical settings), inspection of the printed pattern on wafer or e-beam based inspection technologies.…”

Section: Introductionmentioning

confidence: 99%

Wafer inspection as alternative approach to mask defect qualification

Holfeld

Katzwinkel²,

Seifert³

et al. 2007

SPIE Proceedings

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Defect inspection is one of the major challenges in the manufacturing process of photomasks. The absence of any printing defect on patterned mask is an ultimate requirement for the mask shop, and an increasing effort is spent in order to detect and subsequently eliminate these defects. Current DUV inspection tools use wavelengths five times or more larger than the critical defect size on advanced photomasks. This makes the inspectability of high-end mask patterns (including strong OPC and small SRAF's) and sufficient defect sensitivity a real challenge. The paper evaluates the feasibility of inspecting the printed wafer as an alternative way for the high-sensitivity defect inspection of photomasks. Defects originating in the mask can efficiently be filtered as repeated defects in the various dies on wafer. Using a programmed-defect mask of 65-nm technology, a reliable detection of the printing defects was achieved with an optimized inspection process. These defects could successfully be traced back to the photomask in a semi-automated process in order to enable a following repair step. This study shows that wafer inspection is able to provide a full defect qualification of advanced photomasks with the specific advantage of assessing the actual printability of arbitrary defects.

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Section: Introductionmentioning

confidence: 99%

Wafer inspection as alternative approach to mask defect qualification

Holfeld

Katzwinkel²,

Seifert³

et al. 2007

SPIE Proceedings

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Impact of transmitted and reflected light inspection on mask inspectability, defect sensitivity, and mask design rule restrictions

Kodera

Badger²,

Gallagher³

et al. 2007

SPIE Proceedings

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Study of advanced mask inspection optics with super-resolution method for next-generation mask fabrication

Hirano¹,

Hirono²,

Ogawa³

et al. 2009

Metrology, Inspection, and Process Control for Microlithography XXIII

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The lithography potential of an ArF (193nm) laser exposure tool with high numerical aperture (NA) will expand its lithography potential to 45nm node production and even beyond. Consequently, a mask inspection system with a wavelength nearly equal to 193nm is required so as to detect defects of the masks using resolution enhancement technology (RET). A novel high-resolution mask inspection platform using DUV wavelength has been developed, which works at 199nm. The wavelength is close to the wavelength of ArF exposure tool. In order to adapt 199nm optics for hp2x nm node and beyond defect detection on next generation mask with appropriate condition, further development such as the illumination condition modification technique has been studied. The illumination optics has the advantageous feature that super-resolution method is applied by adding the optics. To evaluate the super-resolution effect of illumination condition control optics, the interaction of light with mask features is calculated rigorously using RCWA (Rigorous Coupled-Wave Analysis) method.In this paper, image contrast enhancement effect using newly designed super-resolution optics which is applied to transmitted and reflected light image acquisition system are presented with simulation and experiment.

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Development of next-generation mask inspection method by using the feature of mask image captured with 199-nm inspection optics

Cited by 5 publications

References 0 publications

Wafer inspection as alternative approach to mask defect qualification

Wafer inspection as alternative approach to mask defect qualification

Impact of transmitted and reflected light inspection on mask inspectability, defect sensitivity, and mask design rule restrictions

Study of advanced mask inspection optics with super-resolution method for next-generation mask fabrication

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