Development of novel positive-tone resists for EUVL

Owada, Takanori; Yomogita, Akinori; Kashiwamura, Takashi; Kusaba, Toshiaki; Miyamoto, Shingo; Takeya, Tetsuro

doi:10.1117/12.813631

Cited by 5 publications

(2 citation statements)

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“…11,12) For LWR reduction, it is reported that controlling the distribution of a protecting group on a molecular resist material is an effective method, which leads to controlling reactions of chemically amplified (CA) reaction in a resist film. [13][14][15][16] It is also reported that low-molecular-weight polymeric materials showed good resolution and LWR. 17) It is reported that chemically amplified reactions at the image boundary between an exposed and a non exposed area are an important factor for reducing LER of resist patterns in EUV and EB lithography.…”

Section: Introductionmentioning

confidence: 96%

Decomposition and Roughness Analysis of Chemically Amplified Molecular Resist for Reducing Line Width Roughness

Shiono¹,

Hada²,

Sato³

et al. 2010

Jpn. J. Appl. Phys.

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A molecular resist material, which includes only one protecting group per molecule was designed and synthesized as Prot-1. After confirming the structure and purity of Prot-1, resist A formulated with Prot-1 as a base material was prepared. Resist A showed a good contrast curve. To confirm the decomposition behavior by an electron beam (EB) exposure, resist A was analyzed using high performance liquid chromatography (HPLC). From the HPLC analysis, it was found that the dissolution switching of resist A due to EB exposure was caused by a deprotection reaction of Prot-1. We evaluated the resolution and line edge roughness (LER) of resist A using EB lithography. Resist A showed 25 nm half pitch (hp) resolution and a partially resolved 20 nm hp at an exposure dose of 36 µC/cm2 using an EB writing system with an acceleration voltage (V) of 50 kV. The LER of resist A was 3.8 nm (3σ) for a 100-nm-hp line-and-space pattern, which is similar to a ZEP520A non chemically amplified resist. As a result, we confirmed that a uniform deprotection reaction of just one deprotection group of resist A in the exposed area improved LER and resolution.

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Section: Introductionmentioning

confidence: 96%

Decomposition and Roughness Analysis of Chemically Amplified Molecular Resist for Reducing Line Width Roughness

Shiono¹,

Hada²,

Sato³

et al. 2010

Jpn. J. Appl. Phys.

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“…During one of the most important processes for electron energy degradation, the secondary electrons react with PAG to produce photo acid. 4,5 While many researchers are working on optimization of resist materials including acid generators and polymer platform to enhance the overall EUV performance, [5][6][7][8][9][10][11] it was realized that multilayer materials are one of the most feasible schemes to achieve the required lithography performance for 22 nm HP and beyond. 2 Several groups have developed underlayer materials that can improve sensitivity, pattern profile and processing in EUV lithography.…”

Section: Introductionmentioning

confidence: 99%

Progress in EUV Underlayer Materials

Yao

Bogusz

Cho

et al. 2012

J. Photopol. Sci. Technol.

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EUV lithography continues to be developed as a technology for sub-30nm and especially sub-20nm pattern imaging in the semiconductor industry. To achieve the desired photoresist resolution, line width roughness and sensitivity (RLS) performance for such fine feature patterns, multilayer materials are almost certainly needed to define the overall lithography process. EUV underlayer (EBL) materials with high EUV photon absorption (EPA) unit can improve resist performance in areas such as sensitivity, imaging capability, dissolution contrast, resolution and process window. In this paper, we report more detailed studies on our new generation of EBL materials, showing enhanced integrated EUV performance including reduction of LWR. One advanced EBL material tested has incorporated metal components, and shows sensitivity improvement as well as high etch selectivity, and can be used as hard mask for next generation pattern imaging.

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Lithographic Evaluation of Chemically Amplified Molecular Resist for below 22nm Resolution

Shiono

Hada

Sato

et al. 2009

J. Photopol. Sci. Technol.

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Results and Discussion 3.1. 1 H-NMR analysis of CA-1 CA as that described in section 2.1.1. Figure 3 shows characteristic parts of 1 H-NMR spectra of CA-1 and CA-2, respectively. The peaks in CA-1 assigned to H a and H b were observed separately while the peak in CA-2 derived from H e was observed as a single peak. The peaks in CA-1 derived from H c and H d were also derived separately while the peak in CA-2 derived from H f was observed as a single peak. These results show that chemical structure of CA-1 is asymmetric, that is, esterification is occurred at just one site of two carboxylic groups in one molecule remaining one carboxylic group in CA-1. Furthermore, a peak of carboxylic group was confirmed at around 13 ppm in CA-1 (Fig. 4).

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Development of novel positive-tone resists for EUVL

Cited by 5 publications

References 0 publications

Decomposition and Roughness Analysis of Chemically Amplified Molecular Resist for Reducing Line Width Roughness

Decomposition and Roughness Analysis of Chemically Amplified Molecular Resist for Reducing Line Width Roughness

Progress in EUV Underlayer Materials

Lithographic Evaluation of Chemically Amplified Molecular Resist for below 22nm Resolution

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