Development of novel UV cross-linkable materials for enhancing planarity in via applications via the correlation of simulated and experimental analyses

Nanoimprint lithography is a newly developed patterning method that employs a hard template for the patterning of structures at micro- and nanometer scales. This technique has many advantages such as cost reduction, high resolution, low line edge roughness (LER), and easy operation. However, resist peeling, defects, low degree of planarization, and low throughput issues present challenges that must be resolved in order to mass produce advanced nanometer-scale devices. In this study, the new approach of using a silicon-containing spin-on hard mask underlayer material with high adhesion by reacting methacrylate groups of the underlayer to the acrylate groups of resist material during ultraviolet irradiation was demonstrated to obtain the excellent patterning dimensional accuracy and increase the process latitudes. The performance of this process is evaluated by using step and flash imprint lithography. The obtained high adhesion between the underlayer and resist material was found to lead a silicon-containing underlayer material to excellent patterning dimensional accuracy and 80 nm straight profiles. We expect that the silicon-containing a spin-on hard mask material under organic resist will be one of the most promising materials in the next generation of nanoimprint lithography.

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“…The thickness less than 10 nm for the stripping test was considered to be acceptable to avoid mixing with the resist. [18][19][20][21]…”

Section: Stripping Testmentioning

confidence: 99%

Silicon-Containing Spin-on Underlayer Material for Step and Flash Nanoimprint Lithography

Takei

Ogawa

Deschner

et al. 2010

Jpn. J. Appl. Phys.

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“…In the fablication of solar cell devices using gas barrier materials, both spin coating and chemical vapor deposition (CVD) antireflective coating have respective advantages and disadvantages. Spin coating process using a conventional thermal cross-link planar material was reported to decrease the thicknesses bias between the blanket areas and interconnect areas in lithography techniques [3][4][5][6][7][8]. In addition, CVD was used as another coating method.…”

Section: Introductionmentioning

confidence: 99%

Development of Inorganic Gas Barrier Material in Solar Cell Devices for Planarization Properties and Sublimate Defect Reduction

Takei

2011

AMR

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This study focuses on inorganic gas barrier material in the advanced process techniques of solar cell devices for planarization properties and sublimate defect reduction. The inorganic gas barrier material have been optimized and studied for excellent surface planarization property. The newest approach by excellent collaborations from both process and material has the planarization property on an irregular substrate such as the patterned steps, via and trenches to increase the depth of focus and pattering resolution. A remarkable reduction in via topography with 0.6 μm as a depth and 0.13 μm as a diameter has been achieved excellent thickness bias less than 50 nm in 220 nm blanket field thickness. In addition, the sublimate amount of the film obtained from the developed inorganic gas barrier material was low as compared with that of the film obtained from the referenced organic non-gas barrier material.

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“…The developed sugar-related organic compounds derived from biomass of TPU-AGF-Green1 were shown to be polymerized on the basis of its solvent resistance. 28,29 It was obvious that eco-friendly antiglare film TPU-AGFGreen1 derived from biomass was polymerized by ultraviolet irradiation, in order to avoid generating the defects when separated TPU-AGF-Green1 from disposable replica template.…”

Section: Ultraviolet Curing Properties Of Tpu-agf-green1mentioning

confidence: 99%

Ecofriendly antiglare film derived from biomass using ultraviolet curing nanoimprint lithography for high-definition display

Takei

Murakami²,

Mori³

et al. 2013

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Nanopatterning of an ecofriendly antiglare film derived from biomass using an ultraviolet curing nanoimprint lithography is reported. Developed sugar-related organic compounds with liquid glucose and trehalose derivatives derived from biomass produced high-quality imprint images of pillar patterns with a 230-nm diameter. Ecofriendly antiglare film with liquid glucose and trehalose derivatives derived from biomass was indicated to achieve the real refraction index of 1.45 to 1.53 at 350 to 800 nm, low imaginary refractive index of <0.005 and low volumetric shrinkage of 4.8% during ultraviolet irradiation. A distinctive bulky glucose structure in glucose and trehalose derivatives was considered to be effective for minimizing the volumetric shrinkage of resist film during ultraviolet irradiation, in addition to suitable optical properties for high-definition display.

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Development of novel UV cross-linkable materials for enhancing planarity in via applications via the correlation of simulated and experimental analyses

Cited by 4 publications

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Silicon-Containing Spin-on Underlayer Material for Step and Flash Nanoimprint Lithography

Silicon-Containing Spin-on Underlayer Material for Step and Flash Nanoimprint Lithography

Development of Inorganic Gas Barrier Material in Solar Cell Devices for Planarization Properties and Sublimate Defect Reduction

Ecofriendly antiglare film derived from biomass using ultraviolet curing nanoimprint lithography for high-definition display

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