Development of optical computerized tomography in capacitively coupled plasmas and inductively coupled plasmas for plasma etching

Makabe, Toshiaki; Petrović, Zoran Lj.

doi:10.1016/s0169-4332(02)00022-3

Cited by 63 publications

(38 citation statements)

References 128 publications

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“…Low-pressure rf plasma was discovered by Tesla in the 1890s [99], and he predicted that such discharges would be utilized as plasma chemical reactors and the basis of numerous industrial technologies. Due to limited interest and their complex nature, the level of understanding of such discharges was rather limited at the beginning of the 1980s when the first significant industrial funding was provided to support the development of plasma devices for microelectronics manufacturing [100]. Besides, rf capacitive discharges produced at intermediate pressures have been used extensively since the 1980s for high power lasers [99,101].…”

Section: Radio-frequency Capacitive Dischargementioning

confidence: 99%

Electron characterization in weakly ionized collisional plasmas: from principles to techniques

Park

Choe

Moon

et al. 2018

Advances in Physics: X

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Weakly ionized plasmas at or near 1 atm pressure, or atmospheric-pressure plasmas, have received increasing attention due to their scientific significance and potential for use in a variety of applications, particularly for medicine, agriculture, and food. However, there is a large imbalance between scientific research on plasma physics and applications, which is partly due to the considerable differences in the characteristics of these plasmas compared with those of low-pressure plasmas. This discrepancy is particularly related to the difficulty in performing plasma diagnostics for highly collisional plasmas. Information on electrons (such as the electron density and temperature) is essential since electrons play a dominant role in the generation of active species related to the physical and chemical processes inside the plasma. So far, limited diagnostics have been available for electrons such as Thomson scattering and optical emission diagnostics based on equilibrium models. Here, we review the available diagnostic methods along with their merits and limitations for characterizing electrons in weakly ionized collisional plasmas. Particular attention is paid to continuum radiation-based spectroscopy, which facilitates multidimensional imaging of electron density and temperature. The future impact of these plasmas on relevant fields (i.e. laboratory and industrial plasmas and their applications) is also addressed.

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Section: Radio-frequency Capacitive Dischargementioning

confidence: 99%

Electron characterization in weakly ionized collisional plasmas: from principles to techniques

Park

Choe

Moon

et al. 2018

Advances in Physics: X

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“…[1][2][3][4][5] These plasma sources are typically used at low pressures (Ͻ10's mTorr) and frequencies (Ͻ10's MHz) to facilitate collisionless ion transport through the sheath, reduce capacitive coupling and manage transmission line effects. 6,7 In this regime, nonlinear electron transport resulting from second harmonic and Pondermotive forces is significant.…”

Section: Introductionmentioning

confidence: 99%

“…9 Tomographic measurements of phase-resolved optical emission from ICPs in Ar and O 2 by Makabe and coworkers had significant harmonic content produced, in part, by these nonlinear Lorentz forces. 5,14,15 For example, their measurements of net excitation rates as a function of radius showed two maxima during the rf cycle resulting from EÃB rf drift in the quasi-dc radial electrostatic field. 14 Sankaran and Kushner numerically investigated the time dependence of excitation rates in low-pressure ICPs sustained in Ar/N 2 .…”

Section: Introductionmentioning

confidence: 99%

Harmonic content and time variation of electron energy distributions in high-plasma-density, low-pressure inductively coupled discharges

Vasenkov

Kushner

2003

Journal of Applied Physics

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Plasma kinetics models which are commonly used to model rf discharges often produce electron energy distributions ͑EEDs͒ averaged over the rf cycle. In doing so, the time dynamics of the EEDs are lost. In this article we describe a technique to recover these time dynamics by using an ''on-the-fly'' ͑OTF͒ Monte Carlo method. The OTF method directly computes the harmonic content of the EEDs using Fourier transform techniques during advancement of the trajectories of pseudoelectrons. The OTF method was incorporated into a two-dimensional plasma equipment model to investigate the harmonic content of the EEDs and their time dependencies in inductively coupled low-pressure (р10 mTorr) and low-frequency (р16 MHz) plasmas sustained in Ar. The computational results demonstrated that the second harmonic dominates the time dynamics of the EEDs, and that this harmonic content mostly occurs at higher energies. The harmonic content at low energies is significant only in the electromagnetic skin layer. We also found that the time evolution of the second harmonic of the EED involves the simultaneous transit of several pulses in energy and space. These pulses are attributed to the nonlinear Lorentz force resulting from the rf magnetic field.

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“…In the last three decades, to promote the further shrinkage and precision etching, low-pressure and higher density plasma generation sources were developed such as magnetron RIE (reactive ion etching) [41], ECR (electron cyclotron resonance) plasma [42], [43] and ICP (inductive-coupled plasma) sources [44], [45]. Most importantly for etching of dielectrics capacitively coupled sources operating at two or three frequencies and in continuous or pulsed mode have been developed [46].…”

Section: Progress Of Dry Etch Technologymentioning

confidence: 99%

Top down nano technologies in production of integrated circuits and surface modification of materials

Petrović

Radjenović

Radmilović-Radjenović

2008

2008 26th International Conference on Microelectronics

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As microelectronic devices continue to shrink and process requirements become ever more stringent, plasma modeling and simulation becomes increasingly more attractive as a tool for design, control and optimization of plasma reactors. Nowadays, plasmaetching processes are expected to produce patterns from the nanometer to the micrometer range. Charging effects in the etching of dielectrics due to ions accumulation in the shallow trenches or contact hole cause damage such as notching and earlier etching stop. In this article, a brief overview of the plasma etch process with emphasis on charging induced damage has been made. In addition, a level set method was applied to the 3D simulation of the etching profile of high aspect ratio trenches into silicon. Calculations were performed in the case of simplified model of Ar + /CF 4 non-equilibrium plasma etching of SiO 2 . The time dependence of the profile charging as well as charging on profile during SiO 2 etching in plasma are presented. We shall also illustrate the properties of etching of organic low-k dielectrics.

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Development of optical computerized tomography in capacitively coupled plasmas and inductively coupled plasmas for plasma etching

Cited by 63 publications

References 128 publications

Electron characterization in weakly ionized collisional plasmas: from principles to techniques

Electron characterization in weakly ionized collisional plasmas: from principles to techniques

Harmonic content and time variation of electron energy distributions in high-plasma-density, low-pressure inductively coupled discharges

Top down nano technologies in production of integrated circuits and surface modification of materials

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