Development of passivating edge shingle modules with right cut, new loss evaluation and liquid-based edge passivation strategy

Wang, Xiao; Zhang, Xuning; Bai, Yuhua; Li, Wenheng; Chen, Bingbing; Guo, Jianxin; Yang, Xueliang; Yan, Xiaobing; Wang, Shufang; Chen, Jianhui

doi:10.1016/j.solmat.2023.112513

Cited by 5 publications

(1 citation statement)

References 21 publications

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“…In view of the existence of charged hydrogen, here we hypothesise that it should be possible to control H + migration across a dielectric thin film by using an electric field [25]. Furthermore, the polarity of molecules in recently reported liquid passivation schemes may also be controlled by an electric field [26][27][28], thus changing the interface mechanisms. It is rather complex to unambiguously ascribe changes in surface passivation to the presence of H. This is especially cumbersome as the interfacial concentrations are much smaller than typical mass spectroscopy detection limits, and can have a strong optoelectronic influence.…”

Section: Introductionmentioning

confidence: 95%

Enhancing Dielectric-Silicon Interfaces Through Surface Electric Fields During Firing

Bonilla,

Al-Dhahir,

Niu

et al. 2024

Preprint

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Section: Introductionmentioning

confidence: 95%

Enhancing Dielectric-Silicon Interfaces Through Surface Electric Fields During Firing

Bonilla,

Al-Dhahir,

Niu

et al. 2024

Preprint

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Scalable Crystalline Silicon Photovoltaic Fibers for Electronic Textile Applications

Jin,

Currano,

Rojas

et al. 2024

Adv Funct Materials

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This study presents a novel method to fabricate scalable photovoltaic fibers (PVFs) by leveraging crystalline silicon (c‐Si) solar cell technology, known for its high‐power conversion efficiency (PCE), stable performance, and low cost. The c‐Si PVF is built on a flexible circuit strip as narrow as 400 µm, and c‐Si cells as small as 0.35 mm2 are surface‐mounted on the strip. The cells are diced from an interdigitated back‐contact c‐Si solar cell (≈153 cm2). A c‐Si PVF including a 1 mm2 cell reaches PCE up to 9.6% and 11.0% under simulated AM 1.5G illumination without and with encapsulation, respectively, the highest reported for c‐Si PVFs, while a 1.5 ft‐long fiber produces ≈37 mW m−1. Additionally, the PVF can tolerate bending fatigue with no sign of performance loss after 8000 bending cycles. To demonstrate practical applicability, the c‐Si PVFs are also woven into textile swatches. They deliver ≈10 mW cm−2 under a halogen lamp and successfully power a light‐emitting‐diode. This PVF technology is scalable with regards to both achieving thin fibers and its compatibility with roll‐to‐roll fabrication processes. The fiber concept presented here can also be extended to any chip‐scale surface mountable devices, enabling cell‐agnostic fiber technologies for multifunctional electronic textiles.

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Enhancing dielectric-silicon interfaces through surface electric fields during firing

Bonilla,

Al-Dhahir,

Niu

et al. 2024

Solar Energy Materials and Solar Cells

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Development of passivating edge shingle modules with right cut, new loss evaluation and liquid-based edge passivation strategy

Cited by 5 publications

References 21 publications

Enhancing Dielectric-Silicon Interfaces Through Surface Electric Fields During Firing

Enhancing Dielectric-Silicon Interfaces Through Surface Electric Fields During Firing

Scalable Crystalline Silicon Photovoltaic Fibers for Electronic Textile Applications

Enhancing dielectric-silicon interfaces through surface electric fields during firing

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