Development of Positive Photoresists

Abstract

A mechanism for the development of positive optical photoresists is proposed, leading to the derivation of a development rate equation. This rate equation compares favorably with experimentally determined development rates. Typical values of the rate constants involved are given. Empirical models are given for the surface induction and substrate adhesion effects.

A Physics-based Model for Negative Tone Development Materials

“…Several development rate equations [12][13][14] are routinely used in lithography simulation. The original equation proposed by Mack [12] is still the most commonly used.…”

“…The original equation proposed by Mack [12] is still the most commonly used. This rate equation given by: (5) and and R(M) is the instantaneous bulk development rate, M is the local protection extent, R max is the maximum development rate of the resist (when M = 0), R min is the minimum development rate of the resist (when M = 1), n is the dissolution selectivity and M th is the threshold protection level when there is an inflection point in the R(M) curve.…”

<title>Two new methods for simulating photolithography development in 3D</title>

“…The non-existence of time dependence suggests that no divided differencing in time is necessary to find a solution, therefore the possibility that a very efficient algorithm to find values of $ that satisfy (12) probably exists. Second, the fact that $ and t are related by (10) means that a solution to (12) generates the location of the surface at different times as contours of $. (Assume that a solution to (12) exists such that the initial surface location has the boundary condition @ = O, and the other conditions on $ expressed in section 2;1 are satisfied.…”

“…Second, the fact that $ and t are related by (10) means that a solution to (12) generates the location of the surface at different times as contours of $. (Assume that a solution to (12) exists such that the initial surface location has the boundary condition @ = O, and the other conditions on $ expressed in section 2;1 are satisfied. The resulting $ will also satisfy equation ( 10).…”

Theoretical Basis For A New Development Rate Model For Positive Photoresists.

“…An example of such an R(m) function is the Dill dissolution rate model: R(m) = exp(E, + EZm + E3mZ (1) The "Original Mack model" [6] can be derived from a consideration of the photolysis kinetics of multifunctional diazonaphthoquinone PACs [7]; provided that only the fully photolyzed PAC molecules lead to a dissolution promotion:…”