Development of Programmable Logic Array for Multiple-Valued Logic Functions

Levashenko, Vitaly; Luk’yanchuk, I.; Zaitseva, Elena; Rabcan, Jan; Rusnak, Patrik

doi:10.1109/tcad.2020.2966676

Cited by 12 publications

(3 citation statements)

References 44 publications

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“…[4][5][6]8,[10][11][12][13][14] This MVL concept is expected to greatly reduce the chip area without downscaling individual components due to the increase in the information-processing capability and therefore, facilitates the development of low-power and highspeed integrated circuits. [15][16][17][18][19] A wide variety of twodimensional (2D) materials and organic semiconductors have already been investigated with a view to further improve the device performance of the AATs and MVLs. [20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] In most of the studies transition metal dichalcogenides (TMDCs) such as molybdenum disulfide (MoS 2 ), tungsten diselenide (WSe 2 ) and tin diselenide (SnSe 2 ) were employed owing to their advantages of dangling bond free surface properties, superior electronic performance metrics and high stability under mechanical stress.…”

Section: Introductionmentioning

confidence: 99%

High-performance multivalued logic circuits based on optically tunable antiambipolar transistors

2022

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Section: Introductionmentioning

confidence: 99%

High-performance multivalued logic circuits based on optically tunable antiambipolar transistors

2022

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“…On the other hand, in MVL each digit can hold multiple states which results in a better performance than binary circuits [3].…”

Section: Introductionmentioning

confidence: 99%

Ultra-Low Energy CNFET-Based Ternary Combinational Circuits Designs

et al. 2021

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The embedded systems, IoT (Internet of Things) devices, and portable electronic devices spread very quickly recently. Most of them depend on batteries to operate. The target of this work is to decrease energy consumption by (1) using Multiple-valued logic (MVL) that shows notable enhancements regarding energy consumption over binary circuits and (2) using carbon nanotube field-effect transistors (CNFET) that show better performance than CMOS. This work proposes ternary combinational circuits using 32 nm CNFET: Ternary Half Adder (THA) with 36 transistors and Ternary Multiplier (TMUL) with 23 transistors. To reduce energy consumption by utilizing the unary operator of the ternary system and employing two voltage supplies (V dd and V dd /2). The result of extensive HSPICE simulations regarding PVT (Process, Voltage, and Temperatures) variations and Noise Immunity Curve (NIC) show the improvements of the proposed designs up to 25% in transistors count and up to 98% in energy consumption reductions. Further, increasing the robustness of process variations and the noise tolerance compared to recent similar designs.

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“…After implementing the binary LIM units, this concept was extended to a ternary inverter-based LIM to further improve the logic and memory functionalities. Ternary logic circuits possess an additional logic state (“1/2”) compared with binary logic circuits, which significantly improves their data integration density. − Our perspective was to utilize each logic state as a memory level, thus realizing three storage levels at the time of memory operation. From this viewpoint, we developed a ternary LIM unit by replacing the C8-BTBT transistor with an anti-ambipolar transistor (AAT) in the logic circuit (Figure a).…”

mentioning

confidence: 99%

Optically Controllable Organic Logic-in-Memory: An Innovative Approach toward Ternary Data Processing and Storage

et al. 2022

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Logic-in-memory (LIM) has emerged as an energyefficient computing technology, as it integrates logic and memory operations in a single device architecture. Herein, a concept of ternary LIM is established. First, a p-type 2,7-dioctyl [1,8-gh]quinolone diimide (PhC2-BQQDI) transistor to obtain a binary memory inverter, in which a zinc phthalocyanine-cored polystyrene (ZnPc-PS 4 ) layer serves as a floating gate. The contrasting photoresponse of the transistors toward visible and ultraviolet light and the efficient holetrapping ability of ZnPc-PS 4 enable us to achieve an optically controllable memory operation with a high memory window of 18 V. Then, a ternary memory inverter is developed using an anti-ambipolar transistor to achieve a three-level data processing and storage system for more advanced LIM applications. Finally, low-voltage operation of the devices is achieved by employing a high-k dielectric layer, which highlights the potential of the developed LIM units for next-generation low-power electronics.

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Development of Programmable Logic Array for Multiple-Valued Logic Functions

Cited by 12 publications

References 44 publications

High-performance multivalued logic circuits based on optically tunable antiambipolar transistors

High-performance multivalued logic circuits based on optically tunable antiambipolar transistors

Ultra-Low Energy CNFET-Based Ternary Combinational Circuits Designs

Optically Controllable Organic Logic-in-Memory: An Innovative Approach toward Ternary Data Processing and Storage

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