Development of radiation tolerant semiconductor detectors for the Super-LHC

Deep level spectroscopy in neutron irradiated FZ and MCz Si was performed by extrinsic photoconductivity spectra measurements in the range of temperature of 18-120 K. The lukovsky model was used, and the Gaussian distribution of deep level energy demonstrated the best fit of simulation and experimental data. The nonmonotonous change of deep levels during annealing, and non-monotonous dependence of their concentration on the fluence were observed. The photoconductivity decay was investigated by the transient photo-Hall effect, recombination parameters of the main recombination centre were determined, and the recombination centre model was proposed. The photoconductivity and thermally stimulated current measurements were used to demonstrate the existence of photogeneration of free carriers by a cascade of optical and thermal transitions.

Section: Resultsmentioning

confidence: 99%

“…The Large Hadron Collider (LHC) in CERN needs upgrading to get scientific results in the future nearer than it was planned earlier [1,2]. It requires increasing luminosity from 10 34 to 10 35 protons/ cm 2 s, but then it is necessary to increase the radiation hardness of semiconductor detectors to 10 16 hadrons/cm 2 .…”

Section: Introductionmentioning

confidence: 99%

Deep level contribution to the carrier generation and recombination in high resistivity Si irradiated by neutrons

Bondzinskas¹,

Kažukauskas²,

Malinovskis³

et al. 2011

“…The samples were characterized using stationary Hall and MR measurement techniques simultaneously. Electric current was sourced at two mostly distant bigger contacts (1,2), while the smaller ones were used for Hall voltage probing (3,4) and for the control of the electric field drop along the sample (4, 5). The magnetic field was perpendicular to the sample face surface, and the field's opposite directions have been switched in the same data acquiring cycle to eliminate the permanent electric potential on the Hall contacts.…”

Section: Methodsmentioning

confidence: 99%

“…This is important both for the degradation of ionizing radiation detectors [1] and for their performance in the magnetic field environment [2]. Hall and magnetoresistance (MR) effects come in parallel as valuable for carrier transport characterization.…”

Section: Introductionmentioning

confidence: 99%

Hall and magnetoresistance measurements in fast electron irradiated silicon

Mekys¹,

Rumbauskas²,

Storasta³

et al. 2014

A set of n-type silicon samples has been irradiated by 6.6 MeV electrons with doses from 1 to 5 (× 10 16 ) e/cm 2 , and temperature dependences of Hall and magnetoresistance mobilities were measured. The ratio of magnetoresistance and Hall mobilities was found equal to 1.15 ± 0.25. The correspondence of the data measured by both methods opened the possibility of measurement of electron mobility in semiconductors with microinhomogeneities by magnetoresistance effect investigation.

“…They are concentrating, respectively, on the possibility of improving the performance of detector material by cooling (CERN RD39 collaboration "Cryogenic detectors" [3]), creating a new type of detector based on diamond as a radiation hard material (CERN RD42 collaboration "Diamond radiation detectors" [4]), and investigating different ways to improve material, detector, and full system properties (CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" [5]). The RD39 collaboration, presently consisting of 18 institutes with about 59 members, concentrates on the investigation of the improvement of detector parameters by using different types of Si crystalline material and on the investigation of defect evolution.…”

Section: Introductionmentioning

confidence: 99%

CERN Large Hadron Collider projects to improve the radiation hardness of ionizing radiation detectors: The role and control of defects in Si and potential of GaN

Blue¹,

Cunningham²,

Gaubas³

et al. 2005

Self Cite

We review recent contributions of Vilnius University teams in collaboration with others participating in the CERN RD39 and RD50 collaborations. These address detector technologies suitable for the proposed Super-LHC facility, capable of withstanding radiation levels arising from a luminosity of 10 35 cm −2 ·s −1 which will present severe challenges to current tracking detector technologies. Candidates among those technologies for use as particle tracking detectors are cryogenic operation and/or defect engineering of Si detectors and GaN -a new semiconductor material for use as a particle tracking detector. The use of advanced methods for material characterization and the investigation of semi-insulating GaN are described in this paper. Peculiarities related to trap recognition in the temperature dependence of photoconductivity kinetics and recombination parameters in highly irradiated Si are presented, together with an overview of the promise of GaN as a radiation hard material.