2013
DOI: 10.4028/www.scientific.net/msf.740-742.785
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Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth

Abstract: We have tried to fabricate a super junction (SJ) structure in SiC semiconductors by the trench-filling technique. After the deep trench formation by dry etching, epitaxial layer is grown over the trench surface. Doping profile of the embedded p-type epitaxial region between the trenches is evaluated by a scanning spreading resistance microscopy (SSRM). The SSRM result reveals that the doping profile is not uniform and there exists a low concentration region along the trench side-wall. Based on the SSRM result,… Show more

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Cited by 29 publications
(25 citation statements)
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“…The fabrication of SJ in 4H-SiC has been problematic. The first two reported works could not make a functional SJ device [16], [17]. The first functional 4H-SiC SJ was reported by Zhong et al [18], [19] using trench etching and sidewall implantation of p-dopant.…”
Section: Device Practicabilitymentioning
confidence: 99%
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“…The fabrication of SJ in 4H-SiC has been problematic. The first two reported works could not make a functional SJ device [16], [17]. The first functional 4H-SiC SJ was reported by Zhong et al [18], [19] using trench etching and sidewall implantation of p-dopant.…”
Section: Device Practicabilitymentioning
confidence: 99%
“…7 The Al2O3 deposition temperature versus the negative charge concentration at the Al2O3/SiO2 interface. Line is our model (16); points are experimental data from [4]. significantly increase for deeper trenches [19].…”
Section: Device Practicabilitymentioning
confidence: 99%
“…The ratio of the low N A to the high N A in Fig. 2 was reported to be 0.25, although the values of N A were not measured [20]. Since the C/Si was less than unity [20], the effect of incorporation of nitrogen donors [26] seemed to affect the measured k(θ = 90 • ) of 0.25.…”
Section: B Model For a Surface-normal-scaling Functionmentioning
confidence: 91%
“…1] of growing species. As an example of the former case, a scanning spreading resistance microscopy (SSRM) image of doping in a 7-µm-deep trench [20] is shown in Fig. 2.…”
Section: Simulation Modelsmentioning
confidence: 99%
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