Development of Silicon Substrate for Advanced Multi-Chip Packaging Process with the Enhanced Gettering Ability

Abstract

A novel concept of MCP substrates that shows the enhanced internal gettering ability even in thinned state was proposed. To achieve the concept, RTA treatment in high temperature was applied to the CZ-Si substrate with a high initial oxygen concentration. It was confirmed that precipitates were formed as high density even in the near surface shallower than 100 μm, where major portion of internal gettering should take place in the MCP process. Moreover, comparable gettering ability to the EPI wafer was confirmed in our concept after thinning, especially in Ni gettering. In conclusion, it was expected that this concept is one of the possible substitutions of EPI wafers in practical MCP process.

Near‐Surface Defect Control by Vacancy Injecting/Out‐Diffusing Rapid Thermal Annealing

“…An et al also evaluated the near‐surface denuded zone after higher temperature RTA processing >1200 °C, especially on Si 300 mm wafer consisting of high intrinsic oxygen concentrations ≈6.0E17/cm 3 . The denuded zone was shrinking with the increase of intrinsic oxygen and the BMD nuclei density was strongly enhanced.…”